Growth and electrical properties of vanadium-dioxide thin films fabricated by magnetron sputtering

Yungsu Shin, Joonchul Moon, Honglyoul Ju, Changwoo Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Single crystalline vanadium-dioxide (VO2) thin films on sapphire (0001) have been grown by using a radio-frequency (rf) magnetron sputtering technique. The dependences of the resistivity change and the hysteresis width of the VO2 thin films on the oxygen flow ratio [= O2× 100/Ar+O2 (%)] at a fixed deposition temperature of 550 °C have been studied. The VO2 film grown at an oxygen flow ratio of 3.85 % showed a metal-to-insulator transition around ∼65 °C with a resistivity ratio as high as 4.3 × 103 and a hysteresis width of ∼6 °C. Moreover, the VO2 film, thermally cycled of up to 100 times across the transition temperature, was found to be stable; i.e., no noticeable changes in the magnitude of the resistivity and in the shape of the hysteresis curve were observed.

Original languageEnglish
Pages (from-to)1828-1831
Number of pages4
JournalJournal of the Korean Physical Society
Volume52
Issue number6
DOIs
Publication statusPublished - 2008 Jun

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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