Single crystalline vanadium-dioxide (VO2) thin films on sapphire (0001) have been grown by using a radio-frequency (rf) magnetron sputtering technique. The dependences of the resistivity change and the hysteresis width of the VO2 thin films on the oxygen flow ratio [= O2× 100/Ar+O2 (%)] at a fixed deposition temperature of 550 °C have been studied. The VO2 film grown at an oxygen flow ratio of 3.85 % showed a metal-to-insulator transition around ∼65 °C with a resistivity ratio as high as 4.3 × 103 and a hysteresis width of ∼6 °C. Moreover, the VO2 film, thermally cycled of up to 100 times across the transition temperature, was found to be stable; i.e., no noticeable changes in the magnitude of the resistivity and in the shape of the hysteresis curve were observed.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)