Abstract
We report on the growth and modulation of silicon carbide nanowires (SiC NWs). The NWs were fabricated by chemical vapor deposition (CVD) process, and had diameters of < 50nm and length of several μm. X-ray diffraction and transmission electron microscopy analysis showed the single crystalline nature of NWs with a growth direction of 〈111〉. In-situ modulation of NWs such as self-alignment of NWs on the graphite or silicon substrates, creation of homo interfaces in the NWs by the formation of twins, and doping of aluminum into NWs was also achieved by controlling the processing conditions in the CVD process. Growth and modulation of single crystalline SiC NWs could helpful to meet the requirements for the fabrication of SiC NW-based nanodevices.
| Original language | English |
|---|---|
| Pages (from-to) | 472-478 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 269 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2004 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Growth and modulation of silicon carbide nanowires. / Choi, Heon-Jin; Seong, Han Kyu; Lee, Jung Chul; Sung, Yun Mo.
In: Journal of Crystal Growth, Vol. 269, No. 2-4, 01.09.2004, p. 472-478.Research output: Contribution to journal › Article
TY - JOUR
T1 - Growth and modulation of silicon carbide nanowires
AU - Choi, Heon-Jin
AU - Seong, Han Kyu
AU - Lee, Jung Chul
AU - Sung, Yun Mo
PY - 2004/9/1
Y1 - 2004/9/1
N2 - We report on the growth and modulation of silicon carbide nanowires (SiC NWs). The NWs were fabricated by chemical vapor deposition (CVD) process, and had diameters of < 50nm and length of several μm. X-ray diffraction and transmission electron microscopy analysis showed the single crystalline nature of NWs with a growth direction of 〈111〉. In-situ modulation of NWs such as self-alignment of NWs on the graphite or silicon substrates, creation of homo interfaces in the NWs by the formation of twins, and doping of aluminum into NWs was also achieved by controlling the processing conditions in the CVD process. Growth and modulation of single crystalline SiC NWs could helpful to meet the requirements for the fabrication of SiC NW-based nanodevices.
AB - We report on the growth and modulation of silicon carbide nanowires (SiC NWs). The NWs were fabricated by chemical vapor deposition (CVD) process, and had diameters of < 50nm and length of several μm. X-ray diffraction and transmission electron microscopy analysis showed the single crystalline nature of NWs with a growth direction of 〈111〉. In-situ modulation of NWs such as self-alignment of NWs on the graphite or silicon substrates, creation of homo interfaces in the NWs by the formation of twins, and doping of aluminum into NWs was also achieved by controlling the processing conditions in the CVD process. Growth and modulation of single crystalline SiC NWs could helpful to meet the requirements for the fabrication of SiC NW-based nanodevices.
UR - http://www.scopus.com/inward/record.url?scp=4344716253&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4344716253&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.05.094
DO - 10.1016/j.jcrysgro.2004.05.094
M3 - Article
AN - SCOPUS:4344716253
VL - 269
SP - 472
EP - 478
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 2-4
ER -