Growth and modulation of silicon carbide nanowires

Heon-Jin Choi, Han Kyu Seong, Jung Chul Lee, Yun Mo Sung

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

We report on the growth and modulation of silicon carbide nanowires (SiC NWs). The NWs were fabricated by chemical vapor deposition (CVD) process, and had diameters of < 50nm and length of several μm. X-ray diffraction and transmission electron microscopy analysis showed the single crystalline nature of NWs with a growth direction of 〈111〉. In-situ modulation of NWs such as self-alignment of NWs on the graphite or silicon substrates, creation of homo interfaces in the NWs by the formation of twins, and doping of aluminum into NWs was also achieved by controlling the processing conditions in the CVD process. Growth and modulation of single crystalline SiC NWs could helpful to meet the requirements for the fabrication of SiC NW-based nanodevices.

Original languageEnglish
Pages (from-to)472-478
Number of pages7
JournalJournal of Crystal Growth
Volume269
Issue number2-4
DOIs
Publication statusPublished - 2004 Sep 1

Fingerprint

Silicon carbide
silicon carbides
Nanowires
nanowires
Modulation
modulation
Chemical vapor deposition
vapor deposition
self alignment
Crystalline materials
Graphite
Silicon
Aluminum
graphite
Doping (additives)
Transmission electron microscopy
aluminum
Fabrication
X ray diffraction
requirements

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Choi, Heon-Jin ; Seong, Han Kyu ; Lee, Jung Chul ; Sung, Yun Mo. / Growth and modulation of silicon carbide nanowires. In: Journal of Crystal Growth. 2004 ; Vol. 269, No. 2-4. pp. 472-478.
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Growth and modulation of silicon carbide nanowires. / Choi, Heon-Jin; Seong, Han Kyu; Lee, Jung Chul; Sung, Yun Mo.

In: Journal of Crystal Growth, Vol. 269, No. 2-4, 01.09.2004, p. 472-478.

Research output: Contribution to journalArticle

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