Growth and physical properties of epitaxial HfN layers on MgO(001)

H. S. Seo; T. Y. Lee; J. G. Wen; I. Petrov; J. E. Greene; D. Gall

doi:10.1063/1.1759783

Growth and physical properties of epitaxial HfN layers on MgO(001)

H. S. Seo, T. Y. Lee, J. G. Wen, I. Petrov, J. E. Greene, D. Gall

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

The growth and physical properties of epitaxial stoichiometric HfN layers deposited on MgO(001) by using ultrahigh vaccum reactive magnetron sputter deposition were analyzed. The high resolution x-ray diffraction, Rutherford backscattering spectroscopy (RBS) and high resolution cross-sectional transmission electron microscopy showed that HfN grows epitaxially with a cube-on-cube orientational relationship to the substrate. It was found that the layers had room-temperature bulk lattice constant of 0.4524 nm. The electronic transport measurements showed that the HfN is metallic with a room-temperature resistivity of 14.2 μωcn, an n-type carrier concentration of 4.8×10 ²¹ cm ^-3.

Original language	English
Pages (from-to)	878-884
Number of pages	7
Journal	Journal of Applied Physics
Volume	96
Issue number	1
DOIs	https://doi.org/10.1063/1.1759783
Publication status	Published - 2004 Jul 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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abstract = "The growth and physical properties of epitaxial stoichiometric HfN layers deposited on MgO(001) by using ultrahigh vaccum reactive magnetron sputter deposition were analyzed. The high resolution x-ray diffraction, Rutherford backscattering spectroscopy (RBS) and high resolution cross-sectional transmission electron microscopy showed that HfN grows epitaxially with a cube-on-cube orientational relationship to the substrate. It was found that the layers had room-temperature bulk lattice constant of 0.4524 nm. The electronic transport measurements showed that the HfN is metallic with a room-temperature resistivity of 14.2 μωcn, an n-type carrier concentration of 4.8×10 21 cm -3.",

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T1 - Growth and physical properties of epitaxial HfN layers on MgO(001)

AU - Seo, H. S.

AU - Lee, T. Y.

AU - Wen, J. G.

AU - Petrov, I.

AU - Greene, J. E.

AU - Gall, D.

PY - 2004/7/1

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N2 - The growth and physical properties of epitaxial stoichiometric HfN layers deposited on MgO(001) by using ultrahigh vaccum reactive magnetron sputter deposition were analyzed. The high resolution x-ray diffraction, Rutherford backscattering spectroscopy (RBS) and high resolution cross-sectional transmission electron microscopy showed that HfN grows epitaxially with a cube-on-cube orientational relationship to the substrate. It was found that the layers had room-temperature bulk lattice constant of 0.4524 nm. The electronic transport measurements showed that the HfN is metallic with a room-temperature resistivity of 14.2 μωcn, an n-type carrier concentration of 4.8×10 21 cm -3.

AB - The growth and physical properties of epitaxial stoichiometric HfN layers deposited on MgO(001) by using ultrahigh vaccum reactive magnetron sputter deposition were analyzed. The high resolution x-ray diffraction, Rutherford backscattering spectroscopy (RBS) and high resolution cross-sectional transmission electron microscopy showed that HfN grows epitaxially with a cube-on-cube orientational relationship to the substrate. It was found that the layers had room-temperature bulk lattice constant of 0.4524 nm. The electronic transport measurements showed that the HfN is metallic with a room-temperature resistivity of 14.2 μωcn, an n-type carrier concentration of 4.8×10 21 cm -3.

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Growth and physical properties of epitaxial HfN layers on MgO(001)

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