Growth and physical properties of epitaxial HfN layers on MgO(001)

H. S. Seo, T. Y. Lee, J. G. Wen, I. Petrov, J. E. Greene, D. Gall

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

The growth and physical properties of epitaxial stoichiometric HfN layers deposited on MgO(001) by using ultrahigh vaccum reactive magnetron sputter deposition were analyzed. The high resolution x-ray diffraction, Rutherford backscattering spectroscopy (RBS) and high resolution cross-sectional transmission electron microscopy showed that HfN grows epitaxially with a cube-on-cube orientational relationship to the substrate. It was found that the layers had room-temperature bulk lattice constant of 0.4524 nm. The electronic transport measurements showed that the HfN is metallic with a room-temperature resistivity of 14.2 μωcn, an n-type carrier concentration of 4.8×10 21 cm -3.

Original languageEnglish
Pages (from-to)878-884
Number of pages7
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
Publication statusPublished - 2004 Jul 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Growth and physical properties of epitaxial HfN layers on MgO(001)'. Together they form a unique fingerprint.

  • Cite this