The growth and physical properties of epitaxial stoichiometric HfN layers deposited on MgO(001) by using ultrahigh vaccum reactive magnetron sputter deposition were analyzed. The high resolution x-ray diffraction, Rutherford backscattering spectroscopy (RBS) and high resolution cross-sectional transmission electron microscopy showed that HfN grows epitaxially with a cube-on-cube orientational relationship to the substrate. It was found that the layers had room-temperature bulk lattice constant of 0.4524 nm. The electronic transport measurements showed that the HfN is metallic with a room-temperature resistivity of 14.2 μωcn, an n-type carrier concentration of 4.8×10 21 cm -3.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)