Growth and physical properties of epitaxial metastable cubic TaN(001)

C. S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, J. E. Greene, M. Odén

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Abstract

We report the growth of epitaxial metastable B1 NaCl structure TaN(001) layers, The films were grown on MgO(001) at 600 °C by ultrahigh vacuum reactive magnetron sputter deposition in mixed Ar/N2 discharges maintained at 20 mTorr (2.67 Pa). X-ray diffraction and transmission electron microscopy results establish the epitaxial relationship as cube-on-cube, (001)TaN¶(001)MgO with [100]TaN¶[100]Mgo, while Rutherford backscattering spectroscopy shows that the layers are overstoichiometric with N/Ta=1.22±0.02. The room-temperature resistivity is 225 μΩ cm with a small negative temperature dependence between 20 and 400 K. The hardness and elastic modulus, as determined by nanoindentation measurements, are 30.8±0.9 and 457±16 GPa, respectively.

Original languageEnglish
Pages (from-to)3808-3810
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number24
DOIs
Publication statusPublished - 1999 Dec 13

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Shin, C. S., Gall, D., Desjardins, P., Vailionis, A., Kim, H., Petrov, I., Greene, J. E., & Odén, M. (1999). Growth and physical properties of epitaxial metastable cubic TaN(001). Applied Physics Letters, 75(24), 3808-3810. https://doi.org/10.1063/1.125463