Titanium dioxide (TiO2) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C. We applied a new source feeding method, known as Discrete Feeding Method (DFM), to PE-ALD TiO2 process for comparing the deposition rate, the physical and electrical film properties with the films deposited by conventional ALD method. Various analytical studies were carried out to investigate the change of TiO2 thin film characteristics due to DFM application. As a result, the optimal process condition was obtained with high physical properties and productivity while keeping electrical characteristics equivalent to those of the conventional ALD condition.
Bibliographical noteFunding Information:
This study was supported by the ASM Genitech Korea Ltd.
© 2019 Author(s).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)