Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

Heungseop Song, Donghyuk Shin, Ji Eun Jeong, Heungsoo Park, Dae Hong Ko

Research output: Contribution to journalArticlepeer-review

Abstract

Titanium dioxide (TiO2) films were deposited by plasma enhanced atomic layer deposition (PE-ALD) system using tetrakis-dimethylamido-titanium (TDMAT) at 250 °C. We applied a new source feeding method, known as Discrete Feeding Method (DFM), to PE-ALD TiO2 process for comparing the deposition rate, the physical and electrical film properties with the films deposited by conventional ALD method. Various analytical studies were carried out to investigate the change of TiO2 thin film characteristics due to DFM application. As a result, the optimal process condition was obtained with high physical properties and productivity while keeping electrical characteristics equivalent to those of the conventional ALD condition.

Original languageEnglish
Article number035333
JournalAIP Advances
Volume9
Issue number3
DOIs
Publication statusPublished - 2019 Mar 1

Bibliographical note

Funding Information:
This study was supported by the ASM Genitech Korea Ltd.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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