Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate

Tae Sik Yoon, Zuoming Zhao, Wen Feng, Biyun Li, Jian Liu, Ya Hong Xie, Du Yeol Ryu, Thomas P. Russell, Hyun Mi Kim, Ki Bum Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dimension on Si (0 0 1) substrate patterned with hexagonally ordered holes of ∼25 nm depth, ∼30 nm diameter, and ∼7×1010 cm-2 density. At 9 Å Ge coverage and 650 °C growth temperature, Ge islands preferentially nucleate inside the holes, starting at the bottom perimeter. Approximately 14% of the holes are filled by Ge islands. Moiré fringe analysis reveals partial strain relaxation of about 72% on average, which is not uniform even within a single island. Crystalline defects such as dislocation are observed from islands smaller than 30 nm. Increased Ge coverage to 70 Å forms larger aggregates of many interconnected islands with slightly increased filling factor of about 17% of the holes. Reducing the growth temperature to 280 °C results in much higher density of islands with a filling factor of about 80% and with some aggregates. The results described in this report represent a potential approach for fabricating semiconductor quantum dots via epitaxy with higher than 1010 cm-2 density.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalJournal of Crystal Growth
Volume290
Issue number2
DOIs
Publication statusPublished - 2006 May 1

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Growth temperature
Strain relaxation
microstructure
Microstructure
Substrates
Dislocations (crystals)
Epitaxial growth
Semiconductor quantum dots
Crystalline materials
Defects
epitaxy
quantum dots
temperature
defects

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Yoon, Tae Sik ; Zhao, Zuoming ; Feng, Wen ; Li, Biyun ; Liu, Jian ; Xie, Ya Hong ; Ryu, Du Yeol ; Russell, Thomas P. ; Kim, Hyun Mi ; Kim, Ki Bum. / Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate. In: Journal of Crystal Growth. 2006 ; Vol. 290, No. 2. pp. 369-373.
@article{4c4984d46cdf45dca2437a9a1f4215c9,
title = "Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate",
abstract = "We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dimension on Si (0 0 1) substrate patterned with hexagonally ordered holes of ∼25 nm depth, ∼30 nm diameter, and ∼7×1010 cm-2 density. At 9 {\AA} Ge coverage and 650 °C growth temperature, Ge islands preferentially nucleate inside the holes, starting at the bottom perimeter. Approximately 14{\%} of the holes are filled by Ge islands. Moir{\'e} fringe analysis reveals partial strain relaxation of about 72{\%} on average, which is not uniform even within a single island. Crystalline defects such as dislocation are observed from islands smaller than 30 nm. Increased Ge coverage to 70 {\AA} forms larger aggregates of many interconnected islands with slightly increased filling factor of about 17{\%} of the holes. Reducing the growth temperature to 280 °C results in much higher density of islands with a filling factor of about 80{\%} and with some aggregates. The results described in this report represent a potential approach for fabricating semiconductor quantum dots via epitaxy with higher than 1010 cm-2 density.",
author = "Yoon, {Tae Sik} and Zuoming Zhao and Wen Feng and Biyun Li and Jian Liu and Xie, {Ya Hong} and Ryu, {Du Yeol} and Russell, {Thomas P.} and Kim, {Hyun Mi} and Kim, {Ki Bum}",
year = "2006",
month = "5",
day = "1",
doi = "10.1016/j.jcrysgro.2006.02.004",
language = "English",
volume = "290",
pages = "369--373",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "2",

}

Yoon, TS, Zhao, Z, Feng, W, Li, B, Liu, J, Xie, YH, Ryu, DY, Russell, TP, Kim, HM & Kim, KB 2006, 'Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate', Journal of Crystal Growth, vol. 290, no. 2, pp. 369-373. https://doi.org/10.1016/j.jcrysgro.2006.02.004

Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate. / Yoon, Tae Sik; Zhao, Zuoming; Feng, Wen; Li, Biyun; Liu, Jian; Xie, Ya Hong; Ryu, Du Yeol; Russell, Thomas P.; Kim, Hyun Mi; Kim, Ki Bum.

In: Journal of Crystal Growth, Vol. 290, No. 2, 01.05.2006, p. 369-373.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate

AU - Yoon, Tae Sik

AU - Zhao, Zuoming

AU - Feng, Wen

AU - Li, Biyun

AU - Liu, Jian

AU - Xie, Ya Hong

AU - Ryu, Du Yeol

AU - Russell, Thomas P.

AU - Kim, Hyun Mi

AU - Kim, Ki Bum

PY - 2006/5/1

Y1 - 2006/5/1

N2 - We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dimension on Si (0 0 1) substrate patterned with hexagonally ordered holes of ∼25 nm depth, ∼30 nm diameter, and ∼7×1010 cm-2 density. At 9 Å Ge coverage and 650 °C growth temperature, Ge islands preferentially nucleate inside the holes, starting at the bottom perimeter. Approximately 14% of the holes are filled by Ge islands. Moiré fringe analysis reveals partial strain relaxation of about 72% on average, which is not uniform even within a single island. Crystalline defects such as dislocation are observed from islands smaller than 30 nm. Increased Ge coverage to 70 Å forms larger aggregates of many interconnected islands with slightly increased filling factor of about 17% of the holes. Reducing the growth temperature to 280 °C results in much higher density of islands with a filling factor of about 80% and with some aggregates. The results described in this report represent a potential approach for fabricating semiconductor quantum dots via epitaxy with higher than 1010 cm-2 density.

AB - We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dimension on Si (0 0 1) substrate patterned with hexagonally ordered holes of ∼25 nm depth, ∼30 nm diameter, and ∼7×1010 cm-2 density. At 9 Å Ge coverage and 650 °C growth temperature, Ge islands preferentially nucleate inside the holes, starting at the bottom perimeter. Approximately 14% of the holes are filled by Ge islands. Moiré fringe analysis reveals partial strain relaxation of about 72% on average, which is not uniform even within a single island. Crystalline defects such as dislocation are observed from islands smaller than 30 nm. Increased Ge coverage to 70 Å forms larger aggregates of many interconnected islands with slightly increased filling factor of about 17% of the holes. Reducing the growth temperature to 280 °C results in much higher density of islands with a filling factor of about 80% and with some aggregates. The results described in this report represent a potential approach for fabricating semiconductor quantum dots via epitaxy with higher than 1010 cm-2 density.

UR - http://www.scopus.com/inward/record.url?scp=33646371263&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646371263&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.02.004

DO - 10.1016/j.jcrysgro.2006.02.004

M3 - Article

AN - SCOPUS:33646371263

VL - 290

SP - 369

EP - 373

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -