Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate

Tae Sik Yoon, Zuoming Zhao, Wen Feng, Biyun Li, Jian Liu, Ya Hong Xie, Du Yeol Ryu, Thomas P. Russell, Hyun Mi Kim, Ki Bum Kim

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6 Citations (Scopus)

Abstract

We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dimension on Si (0 0 1) substrate patterned with hexagonally ordered holes of ∼25 nm depth, ∼30 nm diameter, and ∼7×1010 cm-2 density. At 9 Å Ge coverage and 650 °C growth temperature, Ge islands preferentially nucleate inside the holes, starting at the bottom perimeter. Approximately 14% of the holes are filled by Ge islands. Moiré fringe analysis reveals partial strain relaxation of about 72% on average, which is not uniform even within a single island. Crystalline defects such as dislocation are observed from islands smaller than 30 nm. Increased Ge coverage to 70 Å forms larger aggregates of many interconnected islands with slightly increased filling factor of about 17% of the holes. Reducing the growth temperature to 280 °C results in much higher density of islands with a filling factor of about 80% and with some aggregates. The results described in this report represent a potential approach for fabricating semiconductor quantum dots via epitaxy with higher than 1010 cm-2 density.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalJournal of Crystal Growth
Volume290
Issue number2
DOIs
Publication statusPublished - 2006 May 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Yoon, T. S., Zhao, Z., Feng, W., Li, B., Liu, J., Xie, Y. H., Ryu, D. Y., Russell, T. P., Kim, H. M., & Kim, K. B. (2006). Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate. Journal of Crystal Growth, 290(2), 369-373. https://doi.org/10.1016/j.jcrysgro.2006.02.004