Growth behavior of Bi 2 Te 3 and Sb 2 Te 3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Chang Wan Lee, Gun Hwan Kim, Seong Gu Kang, Min A. Kang, Ki Seok An, Hyungjun Kim, Young Kuk Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)


A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi 2 Te 3 and Sb 2 Te 3 thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi 2 Te 3 and Sb 2 Te 3 thin films was observed when grown on graphene or SiO 2 /Si substrate. Bi 2 Te 3 and Sb 2 Te 3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO 2 /Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.

Original languageEnglish
Article number1600369
JournalPhysica Status Solidi - Rapid Research Letters
Issue number3
Publication statusPublished - 2017 Mar 1


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this