Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

Chang Wan Lee, Gun Hwan Kim, Seong Gu Kang, Min A. Kang, Ki Seok An, Hyungjun Kim, Young Kuk Lee

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.

Original languageEnglish
Article number1600369
JournalPhysica Status Solidi - Rapid Research Letters
Issue number3
Publication statusPublished - 2017 Mar 1

Bibliographical note

Funding Information:
We would like to acknowledge the financial support from the R&D Convergence Program of NST (National Research Council of Science &Technology) of Republic of Korea. Also, this work was supported by Korea Research Institute of Chemical Technology (SI1603-02, Organometallics and Device Fabrication for IT-ET Convergence Project).

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'Growth behavior of Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition'. Together they form a unique fingerprint.

Cite this