A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics