A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.
Bibliographical noteFunding Information:
We would like to acknowledge the financial support from the R&D Convergence Program of NST (National Research Council of Science &Technology) of Republic of Korea. Also, this work was supported by Korea Research Institute of Chemical Technology (SI1603-02, Organometallics and Device Fabrication for IT-ET Convergence Project).
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics