Growth behaviors and film properties of zinc oxide grown by atmospheric mist chemical vapor deposition

Hye Ji Jeon; Seul Gi Lee; Kyung Sik Shin; Sang Woo Kim; Jin Seong Park

doi:10.1016/j.jallcom.2014.06.116

Growth behaviors and film properties of zinc oxide grown by atmospheric mist chemical vapor deposition

Hye Ji Jeon, Seul Gi Lee, Kyung Sik Shin, Sang Woo Kim, Jin Seong Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We evaluated the characteristics of ZnO grown by atmospheric mist chemical vapor deposition at temperatures ranging from 200 °C to 300°C as a function of the water in the solvent. We also utilized ZnO thin films as an active layer of thin film transistors (TFTs) using the mist CVD process. The mobility measured in the thin-film transistor (TFT) increased with increasing water concentration in the solvent and increasing temperature. We believe that the fact that hydrogen is incorporated in ZnO due to the function of water in the solvent plays an important role in determining the transistor characteristics. The higher deposition temperature functions to increase oxygen vacancies which influences the mobility.

Original language	English
Pages (from-to)	244-248
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	614
DOIs	https://doi.org/10.1016/j.jallcom.2014.06.116
Publication status	Published - 2014 Nov 25

Bibliographical note

Funding Information:
This work was supported by the RFID R&D program of MKE/KEIT. [10035225, Development of core technology for high performance AMOLED on plastic].

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2014.06.116

Cite this

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title = "Growth behaviors and film properties of zinc oxide grown by atmospheric mist chemical vapor deposition",

abstract = "We evaluated the characteristics of ZnO grown by atmospheric mist chemical vapor deposition at temperatures ranging from 200 °C to 300°C as a function of the water in the solvent. We also utilized ZnO thin films as an active layer of thin film transistors (TFTs) using the mist CVD process. The mobility measured in the thin-film transistor (TFT) increased with increasing water concentration in the solvent and increasing temperature. We believe that the fact that hydrogen is incorporated in ZnO due to the function of water in the solvent plays an important role in determining the transistor characteristics. The higher deposition temperature functions to increase oxygen vacancies which influences the mobility.",

author = "Jeon, {Hye Ji} and Lee, {Seul Gi} and Shin, {Kyung Sik} and Kim, {Sang Woo} and Park, {Jin Seong}",

note = "Funding Information: This work was supported by the RFID R&D program of MKE/KEIT. [10035225, Development of core technology for high performance AMOLED on plastic]. ",

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doi = "10.1016/j.jallcom.2014.06.116",

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T1 - Growth behaviors and film properties of zinc oxide grown by atmospheric mist chemical vapor deposition

AU - Jeon, Hye Ji

AU - Lee, Seul Gi

AU - Shin, Kyung Sik

AU - Kim, Sang Woo

AU - Park, Jin Seong

N1 - Funding Information: This work was supported by the RFID R&D program of MKE/KEIT. [10035225, Development of core technology for high performance AMOLED on plastic].

PY - 2014/11/25

Y1 - 2014/11/25

N2 - We evaluated the characteristics of ZnO grown by atmospheric mist chemical vapor deposition at temperatures ranging from 200 °C to 300°C as a function of the water in the solvent. We also utilized ZnO thin films as an active layer of thin film transistors (TFTs) using the mist CVD process. The mobility measured in the thin-film transistor (TFT) increased with increasing water concentration in the solvent and increasing temperature. We believe that the fact that hydrogen is incorporated in ZnO due to the function of water in the solvent plays an important role in determining the transistor characteristics. The higher deposition temperature functions to increase oxygen vacancies which influences the mobility.

AB - We evaluated the characteristics of ZnO grown by atmospheric mist chemical vapor deposition at temperatures ranging from 200 °C to 300°C as a function of the water in the solvent. We also utilized ZnO thin films as an active layer of thin film transistors (TFTs) using the mist CVD process. The mobility measured in the thin-film transistor (TFT) increased with increasing water concentration in the solvent and increasing temperature. We believe that the fact that hydrogen is incorporated in ZnO due to the function of water in the solvent plays an important role in determining the transistor characteristics. The higher deposition temperature functions to increase oxygen vacancies which influences the mobility.

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Growth behaviors and film properties of zinc oxide grown by atmospheric mist chemical vapor deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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