We evaluated the characteristics of ZnO grown by atmospheric mist chemical vapor deposition at temperatures ranging from 200 °C to 300°C as a function of the water in the solvent. We also utilized ZnO thin films as an active layer of thin film transistors (TFTs) using the mist CVD process. The mobility measured in the thin-film transistor (TFT) increased with increasing water concentration in the solvent and increasing temperature. We believe that the fact that hydrogen is incorporated in ZnO due to the function of water in the solvent plays an important role in determining the transistor characteristics. The higher deposition temperature functions to increase oxygen vacancies which influences the mobility.
|Number of pages||5|
|Journal||Journal of Alloys and Compounds|
|Publication status||Published - 2014 Nov 25|
Bibliographical noteFunding Information:
This work was supported by the RFID R&D program of MKE/KEIT. [10035225, Development of core technology for high performance AMOLED on plastic].
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry