We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, No. 10030519 ). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by the Nano R&D program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2009-0083749 , No. 2009-0082853 ).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry