Abstract
We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.
| Original language | English |
|---|---|
| Pages (from-to) | 362-366 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2010 Oct 29 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition. / Kim, Woo Hee; Maeng, W. J.; Moon, Kyeong Ju; Myoung, Jae Min; Kim, Hyungjun.
In: Thin Solid Films, Vol. 519, No. 1, 29.10.2010, p. 362-366.Research output: Contribution to journal › Article
TY - JOUR
T1 - Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
AU - Kim, Woo Hee
AU - Maeng, W. J.
AU - Moon, Kyeong Ju
AU - Myoung, Jae Min
AU - Kim, Hyungjun
PY - 2010/10/29
Y1 - 2010/10/29
N2 - We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.
AB - We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.
UR - http://www.scopus.com/inward/record.url?scp=77957706011&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957706011&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2010.07.108
DO - 10.1016/j.tsf.2010.07.108
M3 - Article
AN - SCOPUS:77957706011
VL - 519
SP - 362
EP - 366
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -