Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition

Woo Hee Kim; W. J. Maeng; Kyeong Ju Moon; Jae Min Myoung; Hyungjun Kim

doi:10.1016/j.tsf.2010.07.108

Growth characteristics and electrical properties of La₂O ₃ gate oxides grown by thermal and plasma-enhanced atomic layer deposition

Woo Hee Kim, W. J. Maeng, Kyeong Ju Moon, Jae Min Myoung, Hyungjun Kim

Research output: Contribution to journal › Article

48 Citations (Scopus)

Abstract

We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La ₂O₃) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)₃] as a La precursor. H₂O and O₂ plasma were used as reactants for T-ALD and PE-ALD La₂O₃, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La₂O₃ films. However, PE-ALD La₂O₃ showed higher growth rate and dielectric constant value than those of T-ALD La₂O₃. In addition, lower leakage current density and interface state density were observed for PE-ALD La₂O₃, compared to those of the T-ALD La₂O₃. These experimental results indicate that the PE-ALD La₂O₃ process using La(iPrCp)₃ precursor can be one of the viable options applicable into future microelectronic industry.

Original language	English
Pages (from-to)	362-366
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2010.07.108
Publication status	Published - 2010 Oct 29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Kim, W. H., Maeng, W. J., Moon, K. J., Myoung, J. M., & Kim, H. (2010). Growth characteristics and electrical properties of La₂O ₃ gate oxides grown by thermal and plasma-enhanced atomic layer deposition. Thin Solid Films, 519(1), 362-366. https://doi.org/10.1016/j.tsf.2010.07.108

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title = "Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition",

abstract = "We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.",

author = "Kim, {Woo Hee} and Maeng, {W. J.} and Moon, {Kyeong Ju} and Myoung, {Jae Min} and Hyungjun Kim",

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AU - Kim, Woo Hee

AU - Maeng, W. J.

AU - Moon, Kyeong Ju

AU - Myoung, Jae Min

AU - Kim, Hyungjun

PY - 2010/10/29

Y1 - 2010/10/29

N2 - We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.

AB - We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.

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