Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition

Woo Hee Kim; W. J. Maeng; Kyeong Ju Moon; Jae Min Myoung; Hyungjun Kim

doi:10.1016/j.tsf.2010.07.108

Growth characteristics and electrical properties of La₂O ₃ gate oxides grown by thermal and plasma-enhanced atomic layer deposition

Woo Hee Kim, W. J. Maeng, Kyeong Ju Moon, Jae Min Myoung, Hyungjun Kim

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La ₂O₃) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)₃] as a La precursor. H₂O and O₂ plasma were used as reactants for T-ALD and PE-ALD La₂O₃, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La₂O₃ films. However, PE-ALD La₂O₃ showed higher growth rate and dielectric constant value than those of T-ALD La₂O₃. In addition, lower leakage current density and interface state density were observed for PE-ALD La₂O₃, compared to those of the T-ALD La₂O₃. These experimental results indicate that the PE-ALD La₂O₃ process using La(iPrCp)₃ precursor can be one of the viable options applicable into future microelectronic industry.

Original language	English
Pages (from-to)	362-366
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2010.07.108
Publication status	Published - 2010 Oct 29

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, No. 10030519 ). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by the Nano R&D program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2009-0083749 , No. 2009-0082853 ).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.07.108

Cite this

@article{46073490b3814ab2aad3dace71faefa2,

title = "Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition",

abstract = "We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.",

author = "Kim, {Woo Hee} and Maeng, {W. J.} and Moon, {Kyeong Ju} and Myoung, {Jae Min} and Hyungjun Kim",

note = "Funding Information: This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, No. 10030519 ). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by the Nano R&D program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2009-0083749 , No. 2009-0082853 ).",

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T1 - Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition

AU - Kim, Woo Hee

AU - Maeng, W. J.

AU - Moon, Kyeong Ju

AU - Myoung, Jae Min

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the Technology Innovation Program funded by the Ministry of Knowledge Economy (MKE, Korea, No. 10030519 ). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) and by the Nano R&D program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2009-0083749 , No. 2009-0082853 ).

PY - 2010/10/29

Y1 - 2010/10/29

N2 - We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.

AB - We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.

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