Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition

Woo Hee Kim, W. J. Maeng, Kyeong Ju Moon, Jae Min Myoung, Hyungjun Kim

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.

Original languageEnglish
Pages (from-to)362-366
Number of pages5
JournalThin Solid Films
Volume519
Issue number1
DOIs
Publication statusPublished - 2010 Oct 29

Fingerprint

Plasma Gases
Lanthanum
Atomic layer deposition
atomic layer epitaxy
lanthanum
Oxides
Electric properties
electrical properties
Plasmas
oxides
Interface states
microelectronics
Microelectronics
Leakage currents
Rate constants
leakage
Permittivity
Current density
industries
permittivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition",
abstract = "We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.",
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Growth characteristics and electrical properties of La2O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition. / Kim, Woo Hee; Maeng, W. J.; Moon, Kyeong Ju; Myoung, Jae Min; Kim, Hyungjun.

In: Thin Solid Films, Vol. 519, No. 1, 29.10.2010, p. 362-366.

Research output: Contribution to journalArticle

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AU - Kim, Woo Hee

AU - Maeng, W. J.

AU - Moon, Kyeong Ju

AU - Myoung, Jae Min

AU - Kim, Hyungjun

PY - 2010/10/29

Y1 - 2010/10/29

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AB - We comparatively investigated thermal and plasma-enhanced atomic layer deposition (T-ALD and PE-ALD, respectively) of lanthanium oxide (La 2O3) films using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] as a La precursor. H2O and O2 plasma were used as reactants for T-ALD and PE-ALD La2O3, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure La2O3 films. However, PE-ALD La2O3 showed higher growth rate and dielectric constant value than those of T-ALD La2O3. In addition, lower leakage current density and interface state density were observed for PE-ALD La2O3, compared to those of the T-ALD La2O3. These experimental results indicate that the PE-ALD La2O3 process using La(iPrCp)3 precursor can be one of the viable options applicable into future microelectronic industry.

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