Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

Hanearl Jung, Woo Hee Kim, Il Kwon Oh, Chang Wan Lee, Clement Lansalot-Matras, Su Jeong Lee, Jae Min Myoung, Han Bo Ram Lee, Hyungjun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)2]2 as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of ~4. In addition, the PE-ALD process of the SiO2 films exhibited well-saturated and almost linear growth characteristics of ~1.3 Å cycle−1 without notable incubation cycles, producing pure SiO2 films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO2 film showed that PE-ALD SiO2 films had relatively lower leakage currents than PE-CVD SiO2 films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO2 films were further evaluated in the structures of In–Ga–Zn–O thin-film transistors, and they both showed good device performances in terms of high Ion − Ioff ratios (>108) and low off-currents (<10−11 A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO2 showed better reliability against a negative Vth shift than PE-CVD SiO2, which might also be understood from its smoother channel/insulator interface generation at the interface.

Original languageEnglish
Pages (from-to)5082-5091
Number of pages10
JournalJournal of Materials Science
Volume51
Issue number11
DOIs
Publication statusPublished - 2016 Jun 1

Fingerprint

Atomic layer deposition
Chemical vapor deposition
Electric properties
Plasma enhanced chemical vapor deposition
Plasmas
Thin films
Silicon oxides
Surface reactions
Thin film transistors
Stoichiometry
Leakage currents
Dielectric properties
Capacitors
Permittivity
Metals
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Jung, Hanearl ; Kim, Woo Hee ; Oh, Il Kwon ; Lee, Chang Wan ; Lansalot-Matras, Clement ; Lee, Su Jeong ; Myoung, Jae Min ; Lee, Han Bo Ram ; Kim, Hyungjun. / Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor. In: Journal of Materials Science. 2016 ; Vol. 51, No. 11. pp. 5082-5091.
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abstract = "The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)2]2 as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of ~4. In addition, the PE-ALD process of the SiO2 films exhibited well-saturated and almost linear growth characteristics of ~1.3 {\AA} cycle−1 without notable incubation cycles, producing pure SiO2 films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO2 film showed that PE-ALD SiO2 films had relatively lower leakage currents than PE-CVD SiO2 films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO2 films were further evaluated in the structures of In–Ga–Zn–O thin-film transistors, and they both showed good device performances in terms of high Ion − Ioff ratios (>108) and low off-currents (<10−11 A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO2 showed better reliability against a negative Vth shift than PE-CVD SiO2, which might also be understood from its smoother channel/insulator interface generation at the interface.",
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Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor. / Jung, Hanearl; Kim, Woo Hee; Oh, Il Kwon; Lee, Chang Wan; Lansalot-Matras, Clement; Lee, Su Jeong; Myoung, Jae Min; Lee, Han Bo Ram; Kim, Hyungjun.

In: Journal of Materials Science, Vol. 51, No. 11, 01.06.2016, p. 5082-5091.

Research output: Contribution to journalArticle

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T1 - Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

AU - Jung, Hanearl

AU - Kim, Woo Hee

AU - Oh, Il Kwon

AU - Lee, Chang Wan

AU - Lansalot-Matras, Clement

AU - Lee, Su Jeong

AU - Myoung, Jae Min

AU - Lee, Han Bo Ram

AU - Kim, Hyungjun

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AB - The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)2]2 as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of ~4. In addition, the PE-ALD process of the SiO2 films exhibited well-saturated and almost linear growth characteristics of ~1.3 Å cycle−1 without notable incubation cycles, producing pure SiO2 films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO2 film showed that PE-ALD SiO2 films had relatively lower leakage currents than PE-CVD SiO2 films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO2 films were further evaluated in the structures of In–Ga–Zn–O thin-film transistors, and they both showed good device performances in terms of high Ion − Ioff ratios (>108) and low off-currents (<10−11 A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO2 showed better reliability against a negative Vth shift than PE-CVD SiO2, which might also be understood from its smoother channel/insulator interface generation at the interface.

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