Growth characteristics and electrical properties of Ta2O 5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications

Min Kyu Kim, Woo Hee Kim, Taeyoon Lee, Hyungjun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 Å/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 Å/cycle, 7.3 g/cm3 and ~ 40, respectively).

Original languageEnglish
Pages (from-to)71-75
Number of pages5
JournalThin Solid Films
Volume542
DOIs
Publication statusPublished - 2013 Sep 2

Fingerprint

Atomic layer deposition
atomic layer epitaxy
capacitors
Electric properties
Capacitors
Metals
electrical properties
insulators
Substrates
metals
cycles
Ozone
Tantalum
tantalum
ozone
Permittivity
permittivity
saturation
configurations
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Growth characteristics and electrical properties of Ta2O 5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications",
abstract = "We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 {\AA}/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 {\AA}/cycle, 7.3 g/cm3 and ~ 40, respectively).",
author = "Kim, {Min Kyu} and Kim, {Woo Hee} and Taeyoon Lee and Hyungjun Kim",
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TY - JOUR

T1 - Growth characteristics and electrical properties of Ta2O 5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications

AU - Kim, Min Kyu

AU - Kim, Woo Hee

AU - Lee, Taeyoon

AU - Kim, Hyungjun

PY - 2013/9/2

Y1 - 2013/9/2

N2 - We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 Å/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 Å/cycle, 7.3 g/cm3 and ~ 40, respectively).

AB - We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 Å/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 Å/cycle, 7.3 g/cm3 and ~ 40, respectively).

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