Growth characteristics and electrical properties of Ta2O 5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications

Min Kyu Kim, Woo Hee Kim, Taeyoon Lee, Hyungjun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 Å/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 Å/cycle, 7.3 g/cm3 and ~ 40, respectively).

Original languageEnglish
Pages (from-to)71-75
Number of pages5
JournalThin Solid Films
Volume542
DOIs
Publication statusPublished - 2013 Sep 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Growth characteristics and electrical properties of Ta<sub>2</sub>O <sub>5</sub> grown by thermal and O<sub>3</sub>-based atomic layer deposition on TiN substrates for metal-insulator-metal capacitor applications'. Together they form a unique fingerprint.

  • Cite this