We compared the suitability of tantalum pentoxide (Ta2O 5) films produced via thermal and ozone based atomic layer deposition (Th-ALD and O3-ALD, respectively) using pentaethoxytantalum (PET) as a Ta precursor for use as a capacitor insulator in metal-insulator-metal configurations. H2O and O3 were used as reactants for Th-ALD and O3-ALD Ta2O5, respectively. Both of the processes exhibited ALD mode growth with good self-saturation behavior and produced pure Ta2O5 films. However, O3-ALD Ta2O5 films showed higher growth rates (1.1 Å/cycle), density (7.85 g/cm3) and dielectric constant values (~ 46) compared to those of Th-ALD Ta2O5 (0.9 Å/cycle, 7.3 g/cm3 and ~ 40, respectively).
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation Program funded by the Future-Based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) , which is funded by the Ministry of Education, Science and Technology (No. 2012-0006217 ) and the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2012K001311 ). This work was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2011-0028594 ). Additionally, this work was supported by the Industrial Strategic Technology Development Program ( 10041926 , Development of high density plasma technologies for thin film deposition of nanoscale semiconductor and flexible display processing) funded by the Ministry of Knowledge Economy (MKE), Korea .
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry