Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition

Woo Hee Kim, Min Kyu Kim, W. J. Maeng, Julien Gatineau, Venkat Pallem, Christian Dussarrat, Atif Noori, David Thompson, Schubert Chu, Hyungjun Kim

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

CeO2 thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD). Novel Ce(iPrCp)3 [tris(isopropyl- cyclopentadienyl)cerium] was used as a Ce precursor, which showed clean evaporation with no residue and good thermal stability. For PE-ALD, O 2 plasma was used as an oxidizing reactant. The PE-ALD process exhibited ALD mode with good self-saturation behavior and linear growth without any nucleation delay on Si substrate as a function of growth cycles. Additionally, it produced highly pure and nearly stoichiometric CeO2 films with polycrystalline cubic phases. Electrical properties of Al/CeO 2/p-Si capacitors were improved by O2 annealing with reduction in interface state density (Dit), hysteresis, effective oxide charge (Qeff) and leakage current density. These experimental results indicate that the PE-ALD CeO2 using Ce(iPrCp)3 precursor can be viable option as a future high-k material in the microelectronic industry.

Original languageEnglish
Pages (from-to)G169-G172
JournalJournal of the Electrochemical Society
Volume158
Issue number8
DOIs
Publication statusPublished - 2011 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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