The growth characteristics and electrical and optical properties of gallium-doped ZnO (GZO) grown by thermal atomic layer deposition (Th-ALD) and plasma-enhanced atomic layer deposition (PE-ALD) were investigated as a function of key growth parameters including the growth temperature. While GZO films are generally deposited at high growth temperatures above 300 C, room temperature deposition is possible using PE-ALD. The chemical properties of the films were analyzed by X-ray photoelectron spectroscopy and their electrical properties including the carrier concentration, mobility, and resistivity were investigated by Hall measurements. The lowest resistivity of 1.49 × 10 -3 Ω cm was obtained for the Th-ALD GZO film grown at 300 C. The transmittance was enhanced to over 85% in the visible light range when Ga was doped on a ZnO film. In addition, a GZO bottom-gated thin film transistor (TFT) was fabricated and exhibited good electrical properties.
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10041041, Development of non-vacuum and non-lithography based 5μm width Cu interconnect technology for TFT backplane) funded by the Ministry of Knowledge Economy (MKE, Korea) and National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028594).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films