Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition

Taewook Nam, Chang Wan Lee, Hyun Jae Kim, Hyungjun Kim

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The growth characteristics and electrical and optical properties of gallium-doped ZnO (GZO) grown by thermal atomic layer deposition (Th-ALD) and plasma-enhanced atomic layer deposition (PE-ALD) were investigated as a function of key growth parameters including the growth temperature. While GZO films are generally deposited at high growth temperatures above 300 C, room temperature deposition is possible using PE-ALD. The chemical properties of the films were analyzed by X-ray photoelectron spectroscopy and their electrical properties including the carrier concentration, mobility, and resistivity were investigated by Hall measurements. The lowest resistivity of 1.49 × 10-3 Ω cm was obtained for the Th-ALD GZO film grown at 300 C. The transmittance was enhanced to over 85% in the visible light range when Ga was doped on a ZnO film. In addition, a GZO bottom-gated thin film transistor (TFT) was fabricated and exhibited good electrical properties.

Original languageEnglish
Pages (from-to)260-265
Number of pages6
JournalApplied Surface Science
Volume295
DOIs
Publication statusPublished - 2014 Mar 15

Fingerprint

Plasma Gases
Atomic layer deposition
Plasmas
Thin films
Electric properties
Growth temperature
Gallium
Thin film transistors
Chemical properties
Carrier concentration
X ray photoelectron spectroscopy
Optical properties
Hot Temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition",
abstract = "The growth characteristics and electrical and optical properties of gallium-doped ZnO (GZO) grown by thermal atomic layer deposition (Th-ALD) and plasma-enhanced atomic layer deposition (PE-ALD) were investigated as a function of key growth parameters including the growth temperature. While GZO films are generally deposited at high growth temperatures above 300 C, room temperature deposition is possible using PE-ALD. The chemical properties of the films were analyzed by X-ray photoelectron spectroscopy and their electrical properties including the carrier concentration, mobility, and resistivity were investigated by Hall measurements. The lowest resistivity of 1.49 × 10-3 Ω cm was obtained for the Th-ALD GZO film grown at 300 C. The transmittance was enhanced to over 85{\%} in the visible light range when Ga was doped on a ZnO film. In addition, a GZO bottom-gated thin film transistor (TFT) was fabricated and exhibited good electrical properties.",
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Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition. / Nam, Taewook; Lee, Chang Wan; Kim, Hyun Jae; Kim, Hyungjun.

In: Applied Surface Science, Vol. 295, 15.03.2014, p. 260-265.

Research output: Contribution to journalArticle

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T1 - Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition

AU - Nam, Taewook

AU - Lee, Chang Wan

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PY - 2014/3/15

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N2 - The growth characteristics and electrical and optical properties of gallium-doped ZnO (GZO) grown by thermal atomic layer deposition (Th-ALD) and plasma-enhanced atomic layer deposition (PE-ALD) were investigated as a function of key growth parameters including the growth temperature. While GZO films are generally deposited at high growth temperatures above 300 C, room temperature deposition is possible using PE-ALD. The chemical properties of the films were analyzed by X-ray photoelectron spectroscopy and their electrical properties including the carrier concentration, mobility, and resistivity were investigated by Hall measurements. The lowest resistivity of 1.49 × 10-3 Ω cm was obtained for the Th-ALD GZO film grown at 300 C. The transmittance was enhanced to over 85% in the visible light range when Ga was doped on a ZnO film. In addition, a GZO bottom-gated thin film transistor (TFT) was fabricated and exhibited good electrical properties.

AB - The growth characteristics and electrical and optical properties of gallium-doped ZnO (GZO) grown by thermal atomic layer deposition (Th-ALD) and plasma-enhanced atomic layer deposition (PE-ALD) were investigated as a function of key growth parameters including the growth temperature. While GZO films are generally deposited at high growth temperatures above 300 C, room temperature deposition is possible using PE-ALD. The chemical properties of the films were analyzed by X-ray photoelectron spectroscopy and their electrical properties including the carrier concentration, mobility, and resistivity were investigated by Hall measurements. The lowest resistivity of 1.49 × 10-3 Ω cm was obtained for the Th-ALD GZO film grown at 300 C. The transmittance was enhanced to over 85% in the visible light range when Ga was doped on a ZnO film. In addition, a GZO bottom-gated thin film transistor (TFT) was fabricated and exhibited good electrical properties.

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