Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

Donghyun Kim; Taewook Nam; Jusang Park; Julien Gatineau; Hyungjun Kim

doi:10.1016/j.tsf.2015.01.027

Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

Donghyun Kim, Taewook Nam, Jusang Park, Julien Gatineau, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We investigated the growth of indium oxide (In₂O₃) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In₂O₃/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In₂O₃/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15 × 10^-2 Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300 °C were 4.4 × 10¹⁸ cm^-3 and 28.7 cm²/V·s, respectively.

Original language	English
Pages (from-to)	83-87
Number of pages	5
Journal	Thin Solid Films
Volume	587
DOIs	https://doi.org/10.1016/j.tsf.2015.01.027
Publication status	Published - 2015 Jul 31

Bibliographical note

Funding Information:
This work was supported by the μm width Cu interconnect technology for TFT backplane) funded by the Industrial Strategic Technology Development Program ( 10041041 , development of nonvacuum and nonlithography based 5 Ministry of Knowledge Economy (MKE, Korea)

Publisher Copyright:
© 2015 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2015.01.027

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title = "Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition",

abstract = "We investigated the growth of indium oxide (In2O3) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In2O3/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In2O3/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15 × 10-2 Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300 °C were 4.4 × 1018 cm-3 and 28.7 cm2/V·s, respectively.",

author = "Donghyun Kim and Taewook Nam and Jusang Park and Julien Gatineau and Hyungjun Kim",

note = "Funding Information: This work was supported by the μm width Cu interconnect technology for TFT backplane) funded by the Industrial Strategic Technology Development Program ( 10041041 , development of nonvacuum and nonlithography based 5 Ministry of Knowledge Economy (MKE, Korea) Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

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doi = "10.1016/j.tsf.2015.01.027",

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AU - Kim, Donghyun

AU - Nam, Taewook

AU - Park, Jusang

AU - Gatineau, Julien

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the μm width Cu interconnect technology for TFT backplane) funded by the Industrial Strategic Technology Development Program ( 10041041 , development of nonvacuum and nonlithography based 5 Ministry of Knowledge Economy (MKE, Korea) Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/7/31

Y1 - 2015/7/31

N2 - We investigated the growth of indium oxide (In2O3) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In2O3/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In2O3/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15 × 10-2 Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300 °C were 4.4 × 1018 cm-3 and 28.7 cm2/V·s, respectively.

AB - We investigated the growth of indium oxide (In2O3) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In2O3/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In2O3/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15 × 10-2 Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300 °C were 4.4 × 1018 cm-3 and 28.7 cm2/V·s, respectively.

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Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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