Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

Donghyun Kim, Taewook Nam, Jusang Park, Julien Gatineau, Hyungjun Kim

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13 Citations (Scopus)

Abstract

We investigated the growth of indium oxide (In2O3) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In2O3/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In2O3/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15 × 10-2 Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300 °C were 4.4 × 1018 cm-3 and 28.7 cm2/V·s, respectively.

Original languageEnglish
Pages (from-to)83-87
Number of pages5
JournalThin Solid Films
Volume587
DOIs
Publication statusPublished - 2015 Jul 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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