We investigated the growth of indium oxide (In2O3) and indium-doped zinc oxide (In-doped ZnO, IZO) thin films synthesized using thermal atomic layer deposition with dimethylamino-dimethylindium as the precursor, while varying the In2O3/ZnO ratio. The IZO films were deposited using the supercycle method, and the doping concentration of these films was controlled by changing the In2O3/ZnO cycle ratio. The microstructural properties and chemical compositions of the films were analyzed using X-ray diffraction analysis and X-ray photoelectron spectroscopy. Further, the electrical properties of the IZO films, including their carrier concentration, mobility, and resistivity, were investigated through Hall measurements. The lowest resistivity (6.15 × 10-2 Ω·cm) was exhibited by the IZO film. The highest carrier concentration and mobility exhibited by the IZO films grown at 300 °C were 4.4 × 1018 cm-3 and 28.7 cm2/V·s, respectively.
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program ( 10041041 , development of nonvacuum and nonlithography based 5 μm width Cu interconnect technology for TFT backplane) funded by the Ministry of Knowledge Economy (MKE, Korea)
© 2015 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry