Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor

Taejin Choi, Hanearl Jung, Chang Wan Lee, Ki Yeung Mun, Soo Hyun Kim, Jusang Park, Hyungjun Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A carbon tetrabromide (CBr 4 ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO 2 /Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr 4 precursor. Thus, CBr 4 precursor is a new alternative candidate for use in the mass production of graphene.

Original languageEnglish
Pages (from-to)128-132
Number of pages5
JournalApplied Surface Science
Volume343
DOIs
Publication statusPublished - 2015 Jul 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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