A carbon tetrabromide (CBr 4 ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO 2 /Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr 4 precursor. Thus, CBr 4 precursor is a new alternative candidate for use in the mass production of graphene.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF), funded by the Korea Ministry of Science, ICT, & Future Planning (MSIP) (No. NRF-2014R1A2A1A11052588) , the Fundamental R&D Program for Core Technology of Materials, funded by the Ministry of Trade, Industry and Energy , Republic of Korea (No. 10050296) , and the Center for Integrated Smart Sensors, funded by the Ministry of Science, ICT & Future Planning, as a Global Frontier Project (CISS-2011-0031848).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films