A carbon tetrabromide (CBr 4 ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO 2 /Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr 4 precursor. Thus, CBr 4 precursor is a new alternative candidate for use in the mass production of graphene.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films