Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3) (C2 H5)]4 and SiH[N(CH3) 2]3 precursors via an H2O oxidant

K. B. Chung, Mann-Ho Cho, D. W. Moon, D. C. Suh, Dae Hong Ko, U. Hwang, H. J. Kang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The growth kinetics of Hf silicate-like films, prepared using Hf[N (CH3) (C2 H5)] 4 and SiH[N (CH3) 2] 3 precursors and H2 O as an oxidant were investigated as a function of alternating deposition of HfO2 and SiO2. The ratio of the alternate deposition of HfO2 and SiO2 affected the growth behavior of Hf silicate-like films, but the thickness of the films remained constant, regardless of the total cycles of HfO2 and SiO2. The nucleation of HfO2 showed a strong dependence on the preceding growth cycles of SiO2, as evidenced by in situ medium energy ion scattering analysis. Hf coverage was reduced with an increasing ratio of SiO2 deposition cycles. The suppression of the nucleation of HfO2 is related to remnant Si-H bonds induced by the SiH[N (CH3) 2] 3 precursor after the atomic layer deposited growth of SiO2.

Original languageEnglish
Article number018701ESL
JournalElectrochemical and Solid-State Letters
Volume10
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

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Silicates
Growth kinetics
Oxidants
silicates
kinetics
Nucleation
cycles
nucleation
ion scattering
Scattering
Ions
retarding
energy

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3) (C2 H5)]4 and SiH[N(CH3) 2]3 precursors via an H2O oxidant",
abstract = "The growth kinetics of Hf silicate-like films, prepared using Hf[N (CH3) (C2 H5)] 4 and SiH[N (CH3) 2] 3 precursors and H2 O as an oxidant were investigated as a function of alternating deposition of HfO2 and SiO2. The ratio of the alternate deposition of HfO2 and SiO2 affected the growth behavior of Hf silicate-like films, but the thickness of the films remained constant, regardless of the total cycles of HfO2 and SiO2. The nucleation of HfO2 showed a strong dependence on the preceding growth cycles of SiO2, as evidenced by in situ medium energy ion scattering analysis. Hf coverage was reduced with an increasing ratio of SiO2 deposition cycles. The suppression of the nucleation of HfO2 is related to remnant Si-H bonds induced by the SiH[N (CH3) 2] 3 precursor after the atomic layer deposited growth of SiO2.",
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Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3) (C2 H5)]4 and SiH[N(CH3) 2]3 precursors via an H2O oxidant. / Chung, K. B.; Cho, Mann-Ho; Moon, D. W.; Suh, D. C.; Ko, Dae Hong; Hwang, U.; Kang, H. J.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 1, 018701ESL, 01.01.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3) (C2 H5)]4 and SiH[N(CH3) 2]3 precursors via an H2O oxidant

AU - Chung, K. B.

AU - Cho, Mann-Ho

AU - Moon, D. W.

AU - Suh, D. C.

AU - Ko, Dae Hong

AU - Hwang, U.

AU - Kang, H. J.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - The growth kinetics of Hf silicate-like films, prepared using Hf[N (CH3) (C2 H5)] 4 and SiH[N (CH3) 2] 3 precursors and H2 O as an oxidant were investigated as a function of alternating deposition of HfO2 and SiO2. The ratio of the alternate deposition of HfO2 and SiO2 affected the growth behavior of Hf silicate-like films, but the thickness of the films remained constant, regardless of the total cycles of HfO2 and SiO2. The nucleation of HfO2 showed a strong dependence on the preceding growth cycles of SiO2, as evidenced by in situ medium energy ion scattering analysis. Hf coverage was reduced with an increasing ratio of SiO2 deposition cycles. The suppression of the nucleation of HfO2 is related to remnant Si-H bonds induced by the SiH[N (CH3) 2] 3 precursor after the atomic layer deposited growth of SiO2.

AB - The growth kinetics of Hf silicate-like films, prepared using Hf[N (CH3) (C2 H5)] 4 and SiH[N (CH3) 2] 3 precursors and H2 O as an oxidant were investigated as a function of alternating deposition of HfO2 and SiO2. The ratio of the alternate deposition of HfO2 and SiO2 affected the growth behavior of Hf silicate-like films, but the thickness of the films remained constant, regardless of the total cycles of HfO2 and SiO2. The nucleation of HfO2 showed a strong dependence on the preceding growth cycles of SiO2, as evidenced by in situ medium energy ion scattering analysis. Hf coverage was reduced with an increasing ratio of SiO2 deposition cycles. The suppression of the nucleation of HfO2 is related to remnant Si-H bonds induced by the SiH[N (CH3) 2] 3 precursor after the atomic layer deposited growth of SiO2.

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