Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3) (C2 H5)]4 and SiH[N(CH3) 2]3 precursors via an H2O oxidant

K. B. Chung, M. H. Cho, D. W. Moon, D. C. Suh, D. H. Ko, U. Hwang, H. J. Kang

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The growth kinetics of Hf silicate-like films, prepared using Hf[N (CH3) (C2 H5)] 4 and SiH[N (CH3) 2] 3 precursors and H2 O as an oxidant were investigated as a function of alternating deposition of HfO2 and SiO2. The ratio of the alternate deposition of HfO2 and SiO2 affected the growth behavior of Hf silicate-like films, but the thickness of the films remained constant, regardless of the total cycles of HfO2 and SiO2. The nucleation of HfO2 showed a strong dependence on the preceding growth cycles of SiO2, as evidenced by in situ medium energy ion scattering analysis. Hf coverage was reduced with an increasing ratio of SiO2 deposition cycles. The suppression of the nucleation of HfO2 is related to remnant Si-H bonds induced by the SiH[N (CH3) 2] 3 precursor after the atomic layer deposited growth of SiO2.

Original languageEnglish
Article number018701ESL
Pages (from-to)G1-G4
JournalElectrochemical and Solid-State Letters
Issue number1
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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