Growth kinetics of atomic layer deposited Hf silicate-like films using Hf[N (CH3) (C2 H5)]4 and SiH[N(CH3) 2]3 precursors via an H2O oxidant

K. B. Chung, M. H. Cho, D. W. Moon, D. C. Suh, D. H. Ko, U. Hwang, H. J. Kang

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