Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films

Jin Seong Park, Sang Won Kang, H. Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from Ti Cl4, Si H4, and N2 H2 Ar plasma at 350 °C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from Ti Cl4. The effects of growth parameters on film properties were studied. Especially, the changes in sequences of precursor-reactant exposure steps were found to produce large change in the growth rates and Si concentration in the films. The results are discussed based upon the molecule-surface reaction mechanisms. Also, the Cu diffusion barrier properties of the PEALD Ti-Si-N films were investigated. PEALD Ti-Si-N films have shown better diffusion barrier properties than PEALD TiN films and can be a promising candidate for future Cu interconnect technology beyond 65 nm technology node.]

Original languageEnglish
Pages (from-to)1327-1332
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number3
DOIs
Publication statusPublished - 2006 May 1

Fingerprint

Diffusion barriers
Atomic layer deposition
atomic layer epitaxy
Plasmas
Thin films
thin films
Surface reactions
surface reactions
Molecules
molecules

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from Ti Cl4, Si H4, and N2 H2 Ar plasma at 350 °C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from Ti Cl4. The effects of growth parameters on film properties were studied. Especially, the changes in sequences of precursor-reactant exposure steps were found to produce large change in the growth rates and Si concentration in the films. The results are discussed based upon the molecule-surface reaction mechanisms. Also, the Cu diffusion barrier properties of the PEALD Ti-Si-N films were investigated. PEALD Ti-Si-N films have shown better diffusion barrier properties than PEALD TiN films and can be a promising candidate for future Cu interconnect technology beyond 65 nm technology node.]",
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AU - Kang, Sang Won

AU - Kim, H.

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AB - Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from Ti Cl4, Si H4, and N2 H2 Ar plasma at 350 °C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from Ti Cl4. The effects of growth parameters on film properties were studied. Especially, the changes in sequences of precursor-reactant exposure steps were found to produce large change in the growth rates and Si concentration in the films. The results are discussed based upon the molecule-surface reaction mechanisms. Also, the Cu diffusion barrier properties of the PEALD Ti-Si-N films were investigated. PEALD Ti-Si-N films have shown better diffusion barrier properties than PEALD TiN films and can be a promising candidate for future Cu interconnect technology beyond 65 nm technology node.]

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