Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

S. M. Kang; T. I. Shin; S. W. Kim; D. H. Yoon

doi:10.1016/j.matlet.2009.03.004

Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

S. M. Kang, T. I. Shin, S. W. Kim, D. H. Yoon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The synthesis of single-crystalline GaN nanowires on c-Al₂O₃ substrates using a vapor phase epitaxy process was studied. The GaN nanowires synthesized at a high NH₃ gas flow rate and thus with a sufficient supply of the N source grew via the vapor-solid mechanism, while those synthesized at a low NH₃ gas flow rate grew via the vapor-liquid-solid mechanism. The internal stress between the nanowires and the substrate was investigated using micro-Raman spectroscopy. The X-ray diffraction indicated that the triangular GaN nanowires have a single-crystalline hexagonal structure.

Original language	English
Pages (from-to)	1296-1298
Number of pages	3
Journal	Materials Letters
Volume	63
Issue number	15
DOIs	https://doi.org/10.1016/j.matlet.2009.03.004
Publication status	Published - 2009 Jun 15

Bibliographical note

Funding Information:
This paper was supported by the Samsung Research Fund, Sungkyunkwan University, 2007.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2009.03.004

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title = "Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process",

abstract = "The synthesis of single-crystalline GaN nanowires on c-Al2O3 substrates using a vapor phase epitaxy process was studied. The GaN nanowires synthesized at a high NH3 gas flow rate and thus with a sufficient supply of the N source grew via the vapor-solid mechanism, while those synthesized at a low NH3 gas flow rate grew via the vapor-liquid-solid mechanism. The internal stress between the nanowires and the substrate was investigated using micro-Raman spectroscopy. The X-ray diffraction indicated that the triangular GaN nanowires have a single-crystalline hexagonal structure.",

author = "Kang, {S. M.} and Shin, {T. I.} and Kim, {S. W.} and Yoon, {D. H.}",

note = "Funding Information: This paper was supported by the Samsung Research Fund, Sungkyunkwan University, 2007.",

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AU - Kang, S. M.

AU - Shin, T. I.

AU - Kim, S. W.

AU - Yoon, D. H.

N1 - Funding Information: This paper was supported by the Samsung Research Fund, Sungkyunkwan University, 2007.

PY - 2009/6/15

Y1 - 2009/6/15

N2 - The synthesis of single-crystalline GaN nanowires on c-Al2O3 substrates using a vapor phase epitaxy process was studied. The GaN nanowires synthesized at a high NH3 gas flow rate and thus with a sufficient supply of the N source grew via the vapor-solid mechanism, while those synthesized at a low NH3 gas flow rate grew via the vapor-liquid-solid mechanism. The internal stress between the nanowires and the substrate was investigated using micro-Raman spectroscopy. The X-ray diffraction indicated that the triangular GaN nanowires have a single-crystalline hexagonal structure.

AB - The synthesis of single-crystalline GaN nanowires on c-Al2O3 substrates using a vapor phase epitaxy process was studied. The GaN nanowires synthesized at a high NH3 gas flow rate and thus with a sufficient supply of the N source grew via the vapor-solid mechanism, while those synthesized at a low NH3 gas flow rate grew via the vapor-liquid-solid mechanism. The internal stress between the nanowires and the substrate was investigated using micro-Raman spectroscopy. The X-ray diffraction indicated that the triangular GaN nanowires have a single-crystalline hexagonal structure.

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Growth mode control and micro-Raman characterization of triangular GaN nanowires in a vapor phase epitaxy process

Abstract

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