The synthesis of single-crystalline GaN nanowires on c-Al2O3 substrates using a vapor phase epitaxy process was studied. The GaN nanowires synthesized at a high NH3 gas flow rate and thus with a sufficient supply of the N source grew via the vapor-solid mechanism, while those synthesized at a low NH3 gas flow rate grew via the vapor-liquid-solid mechanism. The internal stress between the nanowires and the substrate was investigated using micro-Raman spectroscopy. The X-ray diffraction indicated that the triangular GaN nanowires have a single-crystalline hexagonal structure.
|Number of pages||3|
|Publication status||Published - 2009 Jun 15|
Bibliographical noteFunding Information:
This paper was supported by the Samsung Research Fund, Sungkyunkwan University, 2007.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering