Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires

J. P. Kar, S. N. Das, J. H. Choi, T. I. Lee, J. Seo, T. Lee, J. M. Myoung

Research output: Contribution to journalArticle

13 Citations (Scopus)


Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF 2 ) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.

Original languageEnglish
Pages (from-to)4973-4977
Number of pages5
JournalApplied Surface Science
Issue number11
Publication statusPublished - 2011 Mar 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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