Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires

J. P. Kar; S. N. Das; J. H. Choi; T. I. Lee; J. Seo; T. Lee; J. M. Myoung

doi:10.1016/j.apsusc.2010.12.158

Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires

J. P. Kar, S. N. Das, J. H. Choi, T. I. Lee, J. Seo, T. Lee, J. M. Myoung

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF ₂ ) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.

Original language	English
Pages (from-to)	4973-4977
Number of pages	5
Journal	Applied Surface Science
Volume	257
Issue number	11
DOIs	https://doi.org/10.1016/j.apsusc.2010.12.158
Publication status	Published - 2011 Mar 15

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01] and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology [R32-20031].

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2010.12.158

Cite this

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title = "Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires",

abstract = " Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF 2 ) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.",

author = "Kar, {J. P.} and Das, {S. N.} and Choi, {J. H.} and Lee, {T. I.} and J. Seo and T. Lee and Myoung, {J. M.}",

note = "Funding Information: This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01] and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology [R32-20031].",

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AU - Kar, J. P.

AU - Das, S. N.

AU - Choi, J. H.

AU - Lee, T. I.

AU - Seo, J.

AU - Lee, T.

AU - Myoung, J. M.

N1 - Funding Information: This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01] and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology [R32-20031].

PY - 2011/3/15

Y1 - 2011/3/15

N2 - Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF 2 ) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.

AB - Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF 2 ) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.

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Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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