Abstract
Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF 2 ) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.
| Original language | English |
|---|---|
| Pages (from-to) | 4973-4977 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 257 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2011 Mar 15 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires. / Kar, J. P.; Das, S. N.; Choi, J. H.; Lee, T. I.; Seo, J.; Lee, T.; Myoung, J. M.
In: Applied Surface Science, Vol. 257, No. 11, 15.03.2011, p. 4973-4977.Research output: Contribution to journal › Article
TY - JOUR
T1 - Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires
AU - Kar, J. P.
AU - Das, S. N.
AU - Choi, J. H.
AU - Lee, T. I.
AU - Seo, J.
AU - Lee, T.
AU - Myoung, J. M.
PY - 2011/3/15
Y1 - 2011/3/15
N2 - Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF 2 ) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.
AB - Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF 2 ) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.
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UR - http://www.scopus.com/inward/citedby.url?scp=79951678615&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2010.12.158
DO - 10.1016/j.apsusc.2010.12.158
M3 - Article
AN - SCOPUS:79951678615
VL - 257
SP - 4973
EP - 4977
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 11
ER -