Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour deposition

S. S. Yom, W. N. Kang, Y. S. Yoon, J. I. Lee, D. J. Choi, T. W. Kim, K. Y. Seo, P. H. Hur, C. Y. Kim

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Metal-organic chemical vapour deposition of Al2O3 using aluminium isopropoxide (Al(OC3H7)3) and nitrous oxide (N2O) via thermal pyrolysis was investigated with the goal of producing high quality Al2O3p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al2O3 heteroepitaxial film. The stoichiometry of the grown Al2O3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3p-Si heterointerface were approximately 1011 eV-1 cm-2, at levels centred in the silicon energy gap.

Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalThin Solid Films
Volume213
Issue number1
DOIs
Publication statusPublished - 1992 May 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Growth of γ-Al<sub>2</sub>O<sub>3</sub> thin films on silicon by low pressure metal-organic chemical vapour deposition'. Together they form a unique fingerprint.

  • Cite this

    Yom, S. S., Kang, W. N., Yoon, Y. S., Lee, J. I., Choi, D. J., Kim, T. W., Seo, K. Y., Hur, P. H., & Kim, C. Y. (1992). Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour deposition. Thin Solid Films, 213(1), 72-75. https://doi.org/10.1016/0040-6090(92)90476-R