Metal-organic chemical vapour deposition of Al 2 O 3 using aluminium isopropoxide (Al(OC 3 H 7 ) 3 ) and nitrous oxide (N 2 O) via thermal pyrolysis was investigated with the goal of producing high quality Al 2 O 3 p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al 2 O 3 heteroepitaxial film. The stoichiometry of the grown Al 2 O 3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al 2 O 3 insulator gate, and the interface state densities at the Al 2 O 3 p-Si heterointerface were approximately 10 11 eV -1 cm -2 , at levels centred in the silicon energy gap.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry