Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition

S. S. Yom, W. N. Kang, Y. S. Yoon, J. I. Lee, Doo Jin Choi, T. W. Kim, K. Y. Seo, P. H. Hur, C. Y. Kim

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Abstract

Metal-organic chemical vapour deposition of Al 2 O 3 using aluminium isopropoxide (Al(OC 3 H 7 ) 3 ) and nitrous oxide (N 2 O) via thermal pyrolysis was investigated with the goal of producing high quality Al 2 O 3 p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al 2 O 3 heteroepitaxial film. The stoichiometry of the grown Al 2 O 3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al 2 O 3 insulator gate, and the interface state densities at the Al 2 O 3 p-Si heterointerface were approximately 10 11 eV -1 cm -2 , at levels centred in the silicon energy gap.

Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalThin Solid Films
Volume213
Issue number1
DOIs
Publication statusPublished - 1992 May 29

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Yom, S. S., Kang, W. N., Yoon, Y. S., Lee, J. I., Choi, D. J., Kim, T. W., Seo, K. Y., Hur, P. H., & Kim, C. Y. (1992). Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition Thin Solid Films, 213(1), 72-75. https://doi.org/10.1016/0040-6090(92)90476-R