Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation

J. H. Song, D. H. Lim, E. S. Oh, M. H. Cho, J. P. Ann, J. G. Kim, H. C. Sohn, D. H. Ko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Amorphous silicon oxide nanowires (a-SiONWs) were prepared by heating a silicon substrate in the absence of any silicon source. To investigate the mechanism of this growth, we experimented with a variety of growth conditions, including the condition of the substrate and the growth ambient. The distribution of the density of a-SiONWs increased when titanium was present during the operation process. The results as a function of the temperature indicate that the growth mechanism for the high-temperature position (Tsub > ∼1000 ~C) can be explained by a solid-liquid-solid (S-L-S) mechanism. In contrast, the growth at the relatively low-temperature zone (∼900 °C) cannot be explained by the S-L-S mechanism because of the insufficient vapor pressure at the temperature. From various gas flow conditions, the growth region depends significantly on the flow rate of Ar gas. This result indicates that the source of the nanowire (silicon vapor) is the silicon substrate located in a higher temperature region (Tsub > ~1000 °C). Therefore, the mechanism of growth of a-SiONWs is consistent with both the vapor-liquid-solid and the S-L-S mechanism for reactions in different temperature regions.

Original languageEnglish
Pages (from-to)1467-1471
Number of pages5
JournalJournal of the Korean Physical Society
Volume57
Issue number6
DOIs
Publication statusPublished - 2010 Dec 1

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silicon oxides
amorphous silicon
nanowires
solid state
silicon
liquids
vapors
vapor pressure
gas flow
temperature
flow velocity
titanium
heating
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation",
abstract = "Amorphous silicon oxide nanowires (a-SiONWs) were prepared by heating a silicon substrate in the absence of any silicon source. To investigate the mechanism of this growth, we experimented with a variety of growth conditions, including the condition of the substrate and the growth ambient. The distribution of the density of a-SiONWs increased when titanium was present during the operation process. The results as a function of the temperature indicate that the growth mechanism for the high-temperature position (Tsub > ∼1000 ~C) can be explained by a solid-liquid-solid (S-L-S) mechanism. In contrast, the growth at the relatively low-temperature zone (∼900 °C) cannot be explained by the S-L-S mechanism because of the insufficient vapor pressure at the temperature. From various gas flow conditions, the growth region depends significantly on the flow rate of Ar gas. This result indicates that the source of the nanowire (silicon vapor) is the silicon substrate located in a higher temperature region (Tsub > ~1000 °C). Therefore, the mechanism of growth of a-SiONWs is consistent with both the vapor-liquid-solid and the S-L-S mechanism for reactions in different temperature regions.",
author = "Song, {J. H.} and Lim, {D. H.} and Oh, {E. S.} and Cho, {M. H.} and Ann, {J. P.} and Kim, {J. G.} and Sohn, {H. C.} and Ko, {D. H.}",
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Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation. / Song, J. H.; Lim, D. H.; Oh, E. S.; Cho, M. H.; Ann, J. P.; Kim, J. G.; Sohn, H. C.; Ko, D. H.

In: Journal of the Korean Physical Society, Vol. 57, No. 6, 01.12.2010, p. 1467-1471.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation

AU - Song, J. H.

AU - Lim, D. H.

AU - Oh, E. S.

AU - Cho, M. H.

AU - Ann, J. P.

AU - Kim, J. G.

AU - Sohn, H. C.

AU - Ko, D. H.

PY - 2010/12/1

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N2 - Amorphous silicon oxide nanowires (a-SiONWs) were prepared by heating a silicon substrate in the absence of any silicon source. To investigate the mechanism of this growth, we experimented with a variety of growth conditions, including the condition of the substrate and the growth ambient. The distribution of the density of a-SiONWs increased when titanium was present during the operation process. The results as a function of the temperature indicate that the growth mechanism for the high-temperature position (Tsub > ∼1000 ~C) can be explained by a solid-liquid-solid (S-L-S) mechanism. In contrast, the growth at the relatively low-temperature zone (∼900 °C) cannot be explained by the S-L-S mechanism because of the insufficient vapor pressure at the temperature. From various gas flow conditions, the growth region depends significantly on the flow rate of Ar gas. This result indicates that the source of the nanowire (silicon vapor) is the silicon substrate located in a higher temperature region (Tsub > ~1000 °C). Therefore, the mechanism of growth of a-SiONWs is consistent with both the vapor-liquid-solid and the S-L-S mechanism for reactions in different temperature regions.

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