Growth of CsLiB6O10 thin films on Si substrate by pulsed laser deposition using SiO2 and CaF2 as buffer layers

Jong-Souk Yeo, A. Akella, T. F. Huang, L. Hesselink

Research output: Contribution to journalArticle

Abstract

CsLiB6O10 (CLBO) thin films are grown on Si (100) and (111) substrates using lower index SiO2 and CaF2 as buffer layers by pulsed KrF (248 nm) excimer laser ablation of stoichiometric CLBO targets over a temperature range of 425 to 725°C. A CaF2 buffer layer is grown on Si by laser ablation while SiO2 is prepared by standard thermal oxidation. From extended x-ray analysis, it is determined that CaF2 is grown with preferred orientation on Si (100) at temperatures lower than 525°C while on Si (111) substrate, CaF2 is grown epitaxially over the temperature range; this agrees well with observed reflection high energy electron diffraction patterns. X-ray 2θ-scans indicate that crystalline CLBO are grown on SiO2/Si and CaF2/Si (100). Analysis of reflectance spectra from CLBO/ SiO2/Si yields the absorption edge at 182 nm. Surface roughness of the CaF2 and CLBO/CaF2/Si film are 19 and 15 nm, respectively. This relatively rough surface caused by the ablation of wide bandgap CaF2 and CLBO limits the application of CLBO for waveguiding measurement.

Original languageEnglish
Pages (from-to)127-131
Number of pages5
JournalJournal of Electronic Materials
Volume27
Issue number3
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Buffer layers
Pulsed laser deposition
laser ablation
pulsed laser deposition
buffers
Laser ablation
Thin films
x ray analysis
Substrates
thin films
excimer lasers
high energy electrons
ablation
X rays
surface roughness
Reflection high energy electron diffraction
diffraction patterns
electron diffraction
Excimer lasers
Ablation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Growth of CsLiB6O10 thin films on Si substrate by pulsed laser deposition using SiO2 and CaF2 as buffer layers",
abstract = "CsLiB6O10 (CLBO) thin films are grown on Si (100) and (111) substrates using lower index SiO2 and CaF2 as buffer layers by pulsed KrF (248 nm) excimer laser ablation of stoichiometric CLBO targets over a temperature range of 425 to 725°C. A CaF2 buffer layer is grown on Si by laser ablation while SiO2 is prepared by standard thermal oxidation. From extended x-ray analysis, it is determined that CaF2 is grown with preferred orientation on Si (100) at temperatures lower than 525°C while on Si (111) substrate, CaF2 is grown epitaxially over the temperature range; this agrees well with observed reflection high energy electron diffraction patterns. X-ray 2θ-scans indicate that crystalline CLBO are grown on SiO2/Si and CaF2/Si (100). Analysis of reflectance spectra from CLBO/ SiO2/Si yields the absorption edge at 182 nm. Surface roughness of the CaF2 and CLBO/CaF2/Si film are 19 and 15 nm, respectively. This relatively rough surface caused by the ablation of wide bandgap CaF2 and CLBO limits the application of CLBO for waveguiding measurement.",
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Growth of CsLiB6O10 thin films on Si substrate by pulsed laser deposition using SiO2 and CaF2 as buffer layers. / Yeo, Jong-Souk; Akella, A.; Huang, T. F.; Hesselink, L.

In: Journal of Electronic Materials, Vol. 27, No. 3, 01.01.1998, p. 127-131.

Research output: Contribution to journalArticle

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T1 - Growth of CsLiB6O10 thin films on Si substrate by pulsed laser deposition using SiO2 and CaF2 as buffer layers

AU - Yeo, Jong-Souk

AU - Akella, A.

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AU - Hesselink, L.

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AB - CsLiB6O10 (CLBO) thin films are grown on Si (100) and (111) substrates using lower index SiO2 and CaF2 as buffer layers by pulsed KrF (248 nm) excimer laser ablation of stoichiometric CLBO targets over a temperature range of 425 to 725°C. A CaF2 buffer layer is grown on Si by laser ablation while SiO2 is prepared by standard thermal oxidation. From extended x-ray analysis, it is determined that CaF2 is grown with preferred orientation on Si (100) at temperatures lower than 525°C while on Si (111) substrate, CaF2 is grown epitaxially over the temperature range; this agrees well with observed reflection high energy electron diffraction patterns. X-ray 2θ-scans indicate that crystalline CLBO are grown on SiO2/Si and CaF2/Si (100). Analysis of reflectance spectra from CLBO/ SiO2/Si yields the absorption edge at 182 nm. Surface roughness of the CaF2 and CLBO/CaF2/Si film are 19 and 15 nm, respectively. This relatively rough surface caused by the ablation of wide bandgap CaF2 and CLBO limits the application of CLBO for waveguiding measurement.

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