Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition

Hyungjun Kim, A. J. Kellock, S. M. Rossnagel

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

The growth of TaN was studied by plasma-enhanced-atomic layer deposition (PE-ALD) technique using TaCl5 and hydrogen and nitrogen plasmas. Good quality cubic-TaN films with resistivity as low as 350 μω cm were obtained at a low temperature of 300 °C. It was found that the growth rate and resistivity of the films increased with increasing N concentration.

Original languageEnglish
Pages (from-to)7080-7085
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
Publication statusPublished - 2002 Dec 15

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atomic layer epitaxy
electrical resistivity
nitrogen plasma
hydrogen plasma
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Hyungjun ; Kellock, A. J. ; Rossnagel, S. M. / Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 12. pp. 7080-7085.
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Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition. / Kim, Hyungjun; Kellock, A. J.; Rossnagel, S. M.

In: Journal of Applied Physics, Vol. 92, No. 12, 15.12.2002, p. 7080-7085.

Research output: Contribution to journalArticle

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