Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition

Hyungjun Kim, A. J. Kellock, S. M. Rossnagel

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

The growth of TaN was studied by plasma-enhanced-atomic layer deposition (PE-ALD) technique using TaCl5 and hydrogen and nitrogen plasmas. Good quality cubic-TaN films with resistivity as low as 350 μω cm were obtained at a low temperature of 300 °C. It was found that the growth rate and resistivity of the films increased with increasing N concentration.

Original languageEnglish
Pages (from-to)7080-7085
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
Publication statusPublished - 2002 Dec 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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