Growth of epitaxial GaN films using ZnO buffer layer by pulsed laser deposition

T. F. Huang, E. Tuncel, J. S. Yeo, J. S. Harris

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

GaN films and ZnO buffer layers have been deposited on c-cut sapphire substrates by pulsed laser deposition (PLD) employing a KrF laser (λ = 248 nm). The influence of the deposition parameters, such as substrate temperature and gas pressure during growth, have been studied. GaN films grown above 700°C are single crystalline and the full width of half-maximum (FWHM) of the GaN (0002) peak decreases to 0.37° as the growth temperature increases to 800°C. The optimum growth pressure for GaN is determined to be 0.01 torr N2. The optical transmission below the bandgap of the GaN film grown at this pressure is over 85%.

Original languageEnglish
Pages (from-to)389-394
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume421
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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