Growth of epitaxial GaN films using ZnO buffer layer by pulsed laser deposition

T. F. Huang, E. Tuncel, J. S. Yeo, J. S. Harris

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

GaN films and ZnO buffer layers have been deposited on c-cut sapphire substrates by pulsed laser deposition (PLD) employing a KrF laser (λ = 248 nm). The influence of the deposition parameters, such as substrate temperature and gas pressure during growth, have been studied. GaN films grown above 700°C are single crystalline and the full width of half-maximum (FWHM) of the GaN (0002) peak decreases to 0.37° as the growth temperature increases to 800°C. The optimum growth pressure for GaN is determined to be 0.01 torr N2. The optical transmission below the bandgap of the GaN film grown at this pressure is over 85%.

Original languageEnglish
Pages (from-to)389-394
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume421
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

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Epitaxial films
Buffer layers
Pulsed laser deposition
pulsed laser deposition
buffers
Aluminum Oxide
Growth temperature
Substrates
Light transmission
Sapphire
gas pressure
sapphire
Energy gap
Gases
Crystalline materials
temperature
Lasers
lasers
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "GaN films and ZnO buffer layers have been deposited on c-cut sapphire substrates by pulsed laser deposition (PLD) employing a KrF laser (λ = 248 nm). The influence of the deposition parameters, such as substrate temperature and gas pressure during growth, have been studied. GaN films grown above 700°C are single crystalline and the full width of half-maximum (FWHM) of the GaN (0002) peak decreases to 0.37° as the growth temperature increases to 800°C. The optimum growth pressure for GaN is determined to be 0.01 torr N2. The optical transmission below the bandgap of the GaN film grown at this pressure is over 85{\%}.",
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Growth of epitaxial GaN films using ZnO buffer layer by pulsed laser deposition. / Huang, T. F.; Tuncel, E.; Yeo, J. S.; Harris, J. S.

In: Materials Research Society Symposium - Proceedings, Vol. 421, 01.12.1996, p. 389-394.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Growth of epitaxial GaN films using ZnO buffer layer by pulsed laser deposition

AU - Huang, T. F.

AU - Tuncel, E.

AU - Yeo, J. S.

AU - Harris, J. S.

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N2 - GaN films and ZnO buffer layers have been deposited on c-cut sapphire substrates by pulsed laser deposition (PLD) employing a KrF laser (λ = 248 nm). The influence of the deposition parameters, such as substrate temperature and gas pressure during growth, have been studied. GaN films grown above 700°C are single crystalline and the full width of half-maximum (FWHM) of the GaN (0002) peak decreases to 0.37° as the growth temperature increases to 800°C. The optimum growth pressure for GaN is determined to be 0.01 torr N2. The optical transmission below the bandgap of the GaN film grown at this pressure is over 85%.

AB - GaN films and ZnO buffer layers have been deposited on c-cut sapphire substrates by pulsed laser deposition (PLD) employing a KrF laser (λ = 248 nm). The influence of the deposition parameters, such as substrate temperature and gas pressure during growth, have been studied. GaN films grown above 700°C are single crystalline and the full width of half-maximum (FWHM) of the GaN (0002) peak decreases to 0.37° as the growth temperature increases to 800°C. The optimum growth pressure for GaN is determined to be 0.01 torr N2. The optical transmission below the bandgap of the GaN film grown at this pressure is over 85%.

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