Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories

B. I. Seo, U. A. Shaislamov, S. J. Lee, Sang Woo Kim, I. S. Kim, S. K. Hong, Beelyong Yang

Research output: Contribution to journalArticlepeer-review


Demands of ferroelectric high-density memories using the integrated cells of significantly reduced size are expected to increase tremendously in upcoming ubiquitous era. Thus we suggest fabrication of three dimensional (3D) nanotube capacitors for high-density semiconductor memories. In this study fabrication of Bi3.25La 0.75Ti3O12 (BLT) and Pt nanotubes for application in ferroelectric nanotube capacitors were investigated. BLT and Pt nanotubes were fabricated by wetting of porous alumina templates using polymeric metallic sources. Crystallization and nucleation of the nanotubes were analyzed by X-ray diffractometer and field emission-scanning electron microscope techniques. Rapid thermal and furnace annealing effects on nucleation and growth of BLT and Pt nanotubes were discussed.

Original languageEnglish
Pages (from-to)315-319
Number of pages5
JournalJournal of Crystal Growth
Issue number2
Publication statusPublished - 2006 Jul 1

Bibliographical note

Funding Information:
This work was supported by Korean Research Foundation Grant (KRF-2004-002-D00241).

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories'. Together they form a unique fingerprint.

Cite this