Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories

B. I. Seo; U. A. Shaislamov; S. J. Lee; Sang Woo Kim; I. S. Kim; S. K. Hong; Beelyong Yang

doi:10.1016/j.jcrysgro.2006.04.078

Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories

B. I. Seo, U. A. Shaislamov, S. J. Lee, Sang Woo Kim, I. S. Kim, S. K. Hong, Beelyong Yang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Demands of ferroelectric high-density memories using the integrated cells of significantly reduced size are expected to increase tremendously in upcoming ubiquitous era. Thus we suggest fabrication of three dimensional (3D) nanotube capacitors for high-density semiconductor memories. In this study fabrication of Bi_3.25La _0.75Ti₃O₁₂ (BLT) and Pt nanotubes for application in ferroelectric nanotube capacitors were investigated. BLT and Pt nanotubes were fabricated by wetting of porous alumina templates using polymeric metallic sources. Crystallization and nucleation of the nanotubes were analyzed by X-ray diffractometer and field emission-scanning electron microscope techniques. Rapid thermal and furnace annealing effects on nucleation and growth of BLT and Pt nanotubes were discussed.

Original language	English
Pages (from-to)	315-319
Number of pages	5
Journal	Journal of Crystal Growth
Volume	292
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.04.078
Publication status	Published - 2006 Jul 1

Bibliographical note

Funding Information:
This work was supported by Korean Research Foundation Grant (KRF-2004-002-D00241).

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.04.078

Cite this

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title = "Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories",

abstract = "Demands of ferroelectric high-density memories using the integrated cells of significantly reduced size are expected to increase tremendously in upcoming ubiquitous era. Thus we suggest fabrication of three dimensional (3D) nanotube capacitors for high-density semiconductor memories. In this study fabrication of Bi3.25La 0.75Ti3O12 (BLT) and Pt nanotubes for application in ferroelectric nanotube capacitors were investigated. BLT and Pt nanotubes were fabricated by wetting of porous alumina templates using polymeric metallic sources. Crystallization and nucleation of the nanotubes were analyzed by X-ray diffractometer and field emission-scanning electron microscope techniques. Rapid thermal and furnace annealing effects on nucleation and growth of BLT and Pt nanotubes were discussed.",

author = "Seo, {B. I.} and Shaislamov, {U. A.} and Lee, {S. J.} and Kim, {Sang Woo} and Kim, {I. S.} and Hong, {S. K.} and Beelyong Yang",

note = "Funding Information: This work was supported by Korean Research Foundation Grant (KRF-2004-002-D00241).",

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doi = "10.1016/j.jcrysgro.2006.04.078",

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AU - Seo, B. I.

AU - Shaislamov, U. A.

AU - Lee, S. J.

AU - Kim, Sang Woo

AU - Kim, I. S.

AU - Hong, S. K.

AU - Yang, Beelyong

N1 - Funding Information: This work was supported by Korean Research Foundation Grant (KRF-2004-002-D00241).

PY - 2006/7/1

Y1 - 2006/7/1

N2 - Demands of ferroelectric high-density memories using the integrated cells of significantly reduced size are expected to increase tremendously in upcoming ubiquitous era. Thus we suggest fabrication of three dimensional (3D) nanotube capacitors for high-density semiconductor memories. In this study fabrication of Bi3.25La 0.75Ti3O12 (BLT) and Pt nanotubes for application in ferroelectric nanotube capacitors were investigated. BLT and Pt nanotubes were fabricated by wetting of porous alumina templates using polymeric metallic sources. Crystallization and nucleation of the nanotubes were analyzed by X-ray diffractometer and field emission-scanning electron microscope techniques. Rapid thermal and furnace annealing effects on nucleation and growth of BLT and Pt nanotubes were discussed.

AB - Demands of ferroelectric high-density memories using the integrated cells of significantly reduced size are expected to increase tremendously in upcoming ubiquitous era. Thus we suggest fabrication of three dimensional (3D) nanotube capacitors for high-density semiconductor memories. In this study fabrication of Bi3.25La 0.75Ti3O12 (BLT) and Pt nanotubes for application in ferroelectric nanotube capacitors were investigated. BLT and Pt nanotubes were fabricated by wetting of porous alumina templates using polymeric metallic sources. Crystallization and nucleation of the nanotubes were analyzed by X-ray diffractometer and field emission-scanning electron microscope techniques. Rapid thermal and furnace annealing effects on nucleation and growth of BLT and Pt nanotubes were discussed.

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Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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