Growth of good quality InGaN multiple quantum wells by MOCVD

Annamraju Kasi Viswanath; J. I. Lee; S. T. Kim; Dongho Kim

doi:10.1016/j.jcrysgro.2003.08.076

Growth of good quality InGaN multiple quantum wells by MOCVD

Annamraju Kasi Viswanath, J. I. Lee, S. T. Kim, Dongho Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report the optical properties of the blue emitting LED material that belongs to the III-V nitrides family. Quantum wells of InGaN were grown by metal organic chemical vapor deposition. Sapphire was used as the substrate material. Continuous wave and time resolved luminescence experiments were conducted in the temperature range of liquid helium to room temperature. Very intense blue luminescence was observed upto the room temperature. From the very broad linewidth of the emission it was concluded that the compositional fluctuations were dominant. At very low temperatures the lifetimes were found to be somewhat longer than the free exciton case which indicated the localization of excitons at potential fluctuations in the InGaN lattice.

Original language	English
Pages (from-to)	322-326
Number of pages	5
Journal	Journal of Crystal Growth
Volume	260
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.08.076
Publication status	Published - 2004 Jan 9

Bibliographical note

Funding Information:
This research is supported by the National Creative Research Initiatives of Ministry of Science and Technology of Korea. One of the authors (A.K.V.) would like to thank the Brain Pool program of Korea for financial support.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2003.08.076

Cite this

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title = "Growth of good quality InGaN multiple quantum wells by MOCVD",

abstract = "We report the optical properties of the blue emitting LED material that belongs to the III-V nitrides family. Quantum wells of InGaN were grown by metal organic chemical vapor deposition. Sapphire was used as the substrate material. Continuous wave and time resolved luminescence experiments were conducted in the temperature range of liquid helium to room temperature. Very intense blue luminescence was observed upto the room temperature. From the very broad linewidth of the emission it was concluded that the compositional fluctuations were dominant. At very low temperatures the lifetimes were found to be somewhat longer than the free exciton case which indicated the localization of excitons at potential fluctuations in the InGaN lattice.",

author = "Viswanath, {Annamraju Kasi} and Lee, {J. I.} and Kim, {S. T.} and Dongho Kim",

note = "Funding Information: This research is supported by the National Creative Research Initiatives of Ministry of Science and Technology of Korea. One of the authors (A.K.V.) would like to thank the Brain Pool program of Korea for financial support.",

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doi = "10.1016/j.jcrysgro.2003.08.076",

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AU - Viswanath, Annamraju Kasi

AU - Lee, J. I.

AU - Kim, S. T.

AU - Kim, Dongho

N1 - Funding Information: This research is supported by the National Creative Research Initiatives of Ministry of Science and Technology of Korea. One of the authors (A.K.V.) would like to thank the Brain Pool program of Korea for financial support.

PY - 2004/1/9

Y1 - 2004/1/9

N2 - We report the optical properties of the blue emitting LED material that belongs to the III-V nitrides family. Quantum wells of InGaN were grown by metal organic chemical vapor deposition. Sapphire was used as the substrate material. Continuous wave and time resolved luminescence experiments were conducted in the temperature range of liquid helium to room temperature. Very intense blue luminescence was observed upto the room temperature. From the very broad linewidth of the emission it was concluded that the compositional fluctuations were dominant. At very low temperatures the lifetimes were found to be somewhat longer than the free exciton case which indicated the localization of excitons at potential fluctuations in the InGaN lattice.

AB - We report the optical properties of the blue emitting LED material that belongs to the III-V nitrides family. Quantum wells of InGaN were grown by metal organic chemical vapor deposition. Sapphire was used as the substrate material. Continuous wave and time resolved luminescence experiments were conducted in the temperature range of liquid helium to room temperature. Very intense blue luminescence was observed upto the room temperature. From the very broad linewidth of the emission it was concluded that the compositional fluctuations were dominant. At very low temperatures the lifetimes were found to be somewhat longer than the free exciton case which indicated the localization of excitons at potential fluctuations in the InGaN lattice.

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JO - Journal of Crystal Growth

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ER -

Growth of good quality InGaN multiple quantum wells by MOCVD

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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