Growth of good quality InGaN multiple quantum wells by MOCVD

Annamraju Kasi Viswanath, J. I. Lee, S. T. Kim, Dongho Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report the optical properties of the blue emitting LED material that belongs to the III-V nitrides family. Quantum wells of InGaN were grown by metal organic chemical vapor deposition. Sapphire was used as the substrate material. Continuous wave and time resolved luminescence experiments were conducted in the temperature range of liquid helium to room temperature. Very intense blue luminescence was observed upto the room temperature. From the very broad linewidth of the emission it was concluded that the compositional fluctuations were dominant. At very low temperatures the lifetimes were found to be somewhat longer than the free exciton case which indicated the localization of excitons at potential fluctuations in the InGaN lattice.

Original languageEnglish
Pages (from-to)322-326
Number of pages5
JournalJournal of Crystal Growth
Volume260
Issue number3-4
DOIs
Publication statusPublished - 2004 Jan 9

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Growth of good quality InGaN multiple quantum wells by MOCVD'. Together they form a unique fingerprint.

  • Cite this