Growth of high quality ZnO nanowires on graphene

Keun Young Lee; Brijesh Kumar; Hyun Kyu Park; Won Mook Choi; Jae Young Choi; Sang Woo Kim

doi:10.1166/jnn.2012.4627

Growth of high quality ZnO nanowires on graphene

Keun Young Lee, Brijesh Kumar, Hyun Kyu Park, Won Mook Choi, Jae Young Choi, Sang Woo Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report growth of the ZnO nanowires on graphene/SiO ₂/Si substrates using a chemical vapor deposition method. The length of nanowires varies from 1 μm to 10 μm with increasing the growth time from 30 min to 90 min. X-ray diffraction and high-resolution transmission electron microscopy investigations predict the high structural quality of the c-axis grown single crystalline ZnO nanowires. Temperature dependent photoluminescence spectra from the nanowires reveal excellent optical quality and excitonic behavior in the single crystalline ZnO nanowires. A well-resolved free exciton emission at 3.375 eV, indicates high crystalline quality nanowires and a strong PL peak at 3.370 eV is assigned to neutral-donor bound excitons (D0X).

Original language	English
Pages (from-to)	1551-1554
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	12
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2012.4627
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2012.4627

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title = "Growth of high quality ZnO nanowires on graphene",

abstract = "We report growth of the ZnO nanowires on graphene/SiO 2/Si substrates using a chemical vapor deposition method. The length of nanowires varies from 1 μm to 10 μm with increasing the growth time from 30 min to 90 min. X-ray diffraction and high-resolution transmission electron microscopy investigations predict the high structural quality of the c-axis grown single crystalline ZnO nanowires. Temperature dependent photoluminescence spectra from the nanowires reveal excellent optical quality and excitonic behavior in the single crystalline ZnO nanowires. A well-resolved free exciton emission at 3.375 eV, indicates high crystalline quality nanowires and a strong PL peak at 3.370 eV is assigned to neutral-donor bound excitons (D0X).",

author = "Lee, {Keun Young} and Brijesh Kumar and Park, {Hyun Kyu} and Choi, {Won Mook} and Choi, {Jae Young} and Kim, {Sang Woo}",

year = "2012",

doi = "10.1166/jnn.2012.4627",

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T1 - Growth of high quality ZnO nanowires on graphene

AU - Lee, Keun Young

AU - Kumar, Brijesh

AU - Park, Hyun Kyu

AU - Choi, Won Mook

AU - Choi, Jae Young

AU - Kim, Sang Woo

PY - 2012

Y1 - 2012

N2 - We report growth of the ZnO nanowires on graphene/SiO 2/Si substrates using a chemical vapor deposition method. The length of nanowires varies from 1 μm to 10 μm with increasing the growth time from 30 min to 90 min. X-ray diffraction and high-resolution transmission electron microscopy investigations predict the high structural quality of the c-axis grown single crystalline ZnO nanowires. Temperature dependent photoluminescence spectra from the nanowires reveal excellent optical quality and excitonic behavior in the single crystalline ZnO nanowires. A well-resolved free exciton emission at 3.375 eV, indicates high crystalline quality nanowires and a strong PL peak at 3.370 eV is assigned to neutral-donor bound excitons (D0X).

AB - We report growth of the ZnO nanowires on graphene/SiO 2/Si substrates using a chemical vapor deposition method. The length of nanowires varies from 1 μm to 10 μm with increasing the growth time from 30 min to 90 min. X-ray diffraction and high-resolution transmission electron microscopy investigations predict the high structural quality of the c-axis grown single crystalline ZnO nanowires. Temperature dependent photoluminescence spectra from the nanowires reveal excellent optical quality and excitonic behavior in the single crystalline ZnO nanowires. A well-resolved free exciton emission at 3.375 eV, indicates high crystalline quality nanowires and a strong PL peak at 3.370 eV is assigned to neutral-donor bound excitons (D0X).

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Growth of high quality ZnO nanowires on graphene

Abstract

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