Growth of macrocrystalline silicon on flexible substrates

Y. Djeiidans; V. D. Bul; H. Jae Kim; Y. Bonnassieux; P. Roca; I. Cabatrocas

Growth of macrocrystalline silicon on flexible substrates

Y. Djeiidans, V. D. Bul, H. Jae Kim, Y. Bonnassieux, P. Roca, I. Cabatrocas

Department of Electrical and Electronic Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coatedpolyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm²/V.s.

Original language	English
Pages	184-186
Number of pages	3
Publication status	Published - 2005
Event	Second Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States Duration: 2005 Oct 25 → 2005 Oct 27

Other

Other	Second Americas Display Engineering and Applications Conference, ADEAC 2005
Country/Territory	United States
City	Portland, OR
Period	05/10/25 → 05/10/27

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "Growth of macrocrystalline silicon on flexible substrates",

abstract = "In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coatedpolyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.",

author = "Y. Djeiidans and Bul, {V. D.} and Kim, {H. Jae} and Y. Bonnassieux and P. Roca and I. Cabatrocas",

year = "2005",

language = "English",

pages = "184--186",

note = "Second Americas Display Engineering and Applications Conference, ADEAC 2005 ; Conference date: 25-10-2005 Through 27-10-2005",

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TY - CONF

T1 - Growth of macrocrystalline silicon on flexible substrates

AU - Djeiidans, Y.

AU - Bul, V. D.

AU - Kim, H. Jae

AU - Bonnassieux, Y.

AU - Roca, P.

AU - Cabatrocas, I.

PY - 2005

Y1 - 2005

N2 - In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coatedpolyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.

AB - In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coatedpolyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.

UR - http://www.scopus.com/inward/record.url?scp=33644752919&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644752919&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:33644752919

SP - 184

EP - 186

T2 - Second Americas Display Engineering and Applications Conference, ADEAC 2005

Y2 - 25 October 2005 through 27 October 2005

ER -

Growth of macrocrystalline silicon on flexible substrates

Abstract

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All Science Journal Classification (ASJC) codes

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