Growth of macrocrystalline silicon on flexible substrates

Y. Djeiidans, V. D. Bul, H. Jae Kim, Y. Bonnassieux, P. Roca, I. Cabatrocas

Research output: Contribution to conferencePaper

Abstract

In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coatedpolyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.

Original languageEnglish
Pages184-186
Number of pages3
Publication statusPublished - 2005 Dec 1
EventSecond Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, United States
Duration: 2005 Oct 252005 Oct 27

Other

OtherSecond Americas Display Engineering and Applications Conference, ADEAC 2005
CountryUnited States
CityPortland, OR
Period05/10/2505/10/27

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Djeiidans, Y., Bul, V. D., Kim, H. J., Bonnassieux, Y., Roca, P., & Cabatrocas, I. (2005). Growth of macrocrystalline silicon on flexible substrates. 184-186. Paper presented at Second Americas Display Engineering and Applications Conference, ADEAC 2005, Portland, OR, United States.