Growth of microcrystalline silicon on flexible substrates

Y. Djeridane, V. D. Bui, H. Jae Kim, Y. Bonnassieux, P. Roca i Cabarrocas

Research output: Contribution to journalConference article

Abstract

In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coated polyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.

Original languageEnglish
Pages (from-to)184-186
Number of pages3
JournalSID Conference Record of the International Display Research Conference
Volume2005
Publication statusPublished - 2005
Event25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom
Duration: 2005 Sep 202005 Sep 22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Djeridane, Y., Bui, V. D., Kim, H. J., Bonnassieux, Y., & Roca i Cabarrocas, P. (2005). Growth of microcrystalline silicon on flexible substrates. SID Conference Record of the International Display Research Conference, 2005, 184-186.