In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coated polyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.
|Number of pages||3|
|Journal||SID Conference Record of the International Display Research Conference|
|Publication status||Published - 2005|
|Event||25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom|
Duration: 2005 Sep 20 → 2005 Sep 22
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering