Growth of p-type ZnO thin film on n-type silicon substrate and its application as hybrid homojunction

Manoj Kumar, Jyoti Prakash Kar, In Soo Kim, Se Young Choi, Jae Min Myoung

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A report on the preparation of p-type ZnO thin films, codoped with Al and N, on n-type Si (100) substrate by RF sputtering technique is presented. The as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. ZnO homojunction was fabricated by growing a three-dimensional ZnO hybrid structure of p-type ZnO films, n-type ZnO nanowire and n-type Al-doped ZnO films in order. The current-voltage characteristics clearly showed a diode like rectifying behavior. Room temperature photoluminescence spectra showed dominant peak at 3.20 eV with a broad deep level emission. The electroluminescence spectrum of heterojunction structure exhibited deep level emission at 2.37 eV and ultraviolet emission at 3.20 eV when the injected current attained 100 mA.

Original languageEnglish
Pages (from-to)65-69
Number of pages5
JournalCurrent Applied Physics
Volume11
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

homojunctions
Silicon
Thin films
silicon
Substrates
thin films
hybrid structures
ultraviolet emission
Electroluminescence
Current voltage characteristics
electroluminescence
Nanowires
Sputtering
Heterojunctions
heterojunctions
Photoluminescence
Diodes
nanowires
sputtering
diodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Kumar, Manoj ; Kar, Jyoti Prakash ; Kim, In Soo ; Choi, Se Young ; Myoung, Jae Min. / Growth of p-type ZnO thin film on n-type silicon substrate and its application as hybrid homojunction. In: Current Applied Physics. 2011 ; Vol. 11, No. 1. pp. 65-69.
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Growth of p-type ZnO thin film on n-type silicon substrate and its application as hybrid homojunction. / Kumar, Manoj; Kar, Jyoti Prakash; Kim, In Soo; Choi, Se Young; Myoung, Jae Min.

In: Current Applied Physics, Vol. 11, No. 1, 01.01.2011, p. 65-69.

Research output: Contribution to journalArticle

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AB - A report on the preparation of p-type ZnO thin films, codoped with Al and N, on n-type Si (100) substrate by RF sputtering technique is presented. The as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. ZnO homojunction was fabricated by growing a three-dimensional ZnO hybrid structure of p-type ZnO films, n-type ZnO nanowire and n-type Al-doped ZnO films in order. The current-voltage characteristics clearly showed a diode like rectifying behavior. Room temperature photoluminescence spectra showed dominant peak at 3.20 eV with a broad deep level emission. The electroluminescence spectrum of heterojunction structure exhibited deep level emission at 2.37 eV and ultraviolet emission at 3.20 eV when the injected current attained 100 mA.

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