Abstract
A report on the preparation of p-type ZnO thin films, codoped with Al and N, on n-type Si (100) substrate by RF sputtering technique is presented. The as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. ZnO homojunction was fabricated by growing a three-dimensional ZnO hybrid structure of p-type ZnO films, n-type ZnO nanowire and n-type Al-doped ZnO films in order. The current-voltage characteristics clearly showed a diode like rectifying behavior. Room temperature photoluminescence spectra showed dominant peak at 3.20 eV with a broad deep level emission. The electroluminescence spectrum of heterojunction structure exhibited deep level emission at 2.37 eV and ultraviolet emission at 3.20 eV when the injected current attained 100 mA.
| Original language | English |
|---|---|
| Pages (from-to) | 65-69 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 11 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 Jan |
Bibliographical note
Funding Information:This work was supported by the Second Stage of Brain Korea 21 Project in 2008 and one of the authors (Prof. Jae-Min Myoung) was partly supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction].
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)