Growth of relaxed Si1-xGex by using oxidation of Si1-xGex

B. G. Min, K. S. Jeon, Y. H. Pae, D. H. Ko, M. H. Cho, T. W. Lee, D. H. Ko

Research output: Contribution to conferencePaper

Abstract

The growth of relaxed Si1-xGex on pile up layer using oxidation was discussed. The most usual method to enhance carrier mobility is forming tensile stress at channel by growing Si on relaxed SixGex substrate. The lattice parameter of Si1-xGex can be changed with Ge contents along Vegard's law because Si1-xGex is absolute solid solution of Ge and Si. Strained Si1-xGex was grown on Si (001) wafer by using ultra high vacuum chemical vapor deposition. After than, Ge rich layer was formed by dry oxidation at 800°C and wet etching using 10% HF. The results show that grown Si1-xGex on pile up layers was relaxed as well as improvement in surface roughening.

Original languageEnglish
Pages279-280
Number of pages2
Publication statusPublished - 2004 Dec 1
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Min, B. G., Jeon, K. S., Pae, Y. H., Ko, D. H., Cho, M. H., Lee, T. W., & Ko, D. H. (2004). Growth of relaxed Si1-xGex by using oxidation of Si1-xGex. 279-280. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.