The growth of relaxed Si1-xGex on pile up layer using oxidation was discussed. The most usual method to enhance carrier mobility is forming tensile stress at channel by growing Si on relaxed SixGex substrate. The lattice parameter of Si1-xGex can be changed with Ge contents along Vegard's law because Si1-xGex is absolute solid solution of Ge and Si. Strained Si1-xGex was grown on Si (001) wafer by using ultra high vacuum chemical vapor deposition. After than, Ge rich layer was formed by dry oxidation at 800°C and wet etching using 10% HF. The results show that grown Si1-xGex on pile up layers was relaxed as well as improvement in surface roughening.
|Number of pages||2|
|Publication status||Published - 2004 Dec 1|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||04/10/3 → 04/10/8|
All Science Journal Classification (ASJC) codes