Growth of single crystalline germanium thin film on (100) silicon substrate

Sung Wook Kim, Jaejun Lee, Youn Ho Park, Jeong Min Park, Sangwon Park, Yeon Joo Kim, Heon-Jin Choi

Research output: Contribution to journalArticle

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Abstract

Epitaxial growth of germanium thin films (GeTFs) on Si (111) and Si (100) substrates was investigated, and the prepared films were compared with the films grown on SiO2 substrates. Ge films were prepared in three steps. Initially, a Ge interlayer film with thickness of ∼ 10 nm was deposited on the substrate followed by annealing and recrystallization of the film. A Ge film with a thickness of 500 nm was then deposited. A single crystalline Ge film was grown on Si (100) whereas polycrystalline films were grown on the other substrates. The growth rate of the films depends on the type of the substrates used, which in turn determines the crystallinity of the films. Highly crystalline films were obtained with slow growth rates. The single crystalline epitaxial layer of GeTFs formed on Si (100) exhibited a lower threading dislocation density as compared with those grown on Si (111) and SiO2. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)147-151
Number of pages5
JournalElectronic Materials Letters
Volume13
Issue number2
DOIs
Publication statusPublished - 2017 Mar 1

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Germanium
Silicon
Crystalline materials
Thin films
Substrates
Epitaxial layers
Epitaxial growth

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, Sung Wook ; Lee, Jaejun ; Park, Youn Ho ; Park, Jeong Min ; Park, Sangwon ; Kim, Yeon Joo ; Choi, Heon-Jin. / Growth of single crystalline germanium thin film on (100) silicon substrate. In: Electronic Materials Letters. 2017 ; Vol. 13, No. 2. pp. 147-151.
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abstract = "Epitaxial growth of germanium thin films (GeTFs) on Si (111) and Si (100) substrates was investigated, and the prepared films were compared with the films grown on SiO2 substrates. Ge films were prepared in three steps. Initially, a Ge interlayer film with thickness of ∼ 10 nm was deposited on the substrate followed by annealing and recrystallization of the film. A Ge film with a thickness of 500 nm was then deposited. A single crystalline Ge film was grown on Si (100) whereas polycrystalline films were grown on the other substrates. The growth rate of the films depends on the type of the substrates used, which in turn determines the crystallinity of the films. Highly crystalline films were obtained with slow growth rates. The single crystalline epitaxial layer of GeTFs formed on Si (100) exhibited a lower threading dislocation density as compared with those grown on Si (111) and SiO2. [Figure not available: see fulltext.]",
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Growth of single crystalline germanium thin film on (100) silicon substrate. / Kim, Sung Wook; Lee, Jaejun; Park, Youn Ho; Park, Jeong Min; Park, Sangwon; Kim, Yeon Joo; Choi, Heon-Jin.

In: Electronic Materials Letters, Vol. 13, No. 2, 01.03.2017, p. 147-151.

Research output: Contribution to journalArticle

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AB - Epitaxial growth of germanium thin films (GeTFs) on Si (111) and Si (100) substrates was investigated, and the prepared films were compared with the films grown on SiO2 substrates. Ge films were prepared in three steps. Initially, a Ge interlayer film with thickness of ∼ 10 nm was deposited on the substrate followed by annealing and recrystallization of the film. A Ge film with a thickness of 500 nm was then deposited. A single crystalline Ge film was grown on Si (100) whereas polycrystalline films were grown on the other substrates. The growth rate of the films depends on the type of the substrates used, which in turn determines the crystallinity of the films. Highly crystalline films were obtained with slow growth rates. The single crystalline epitaxial layer of GeTFs formed on Si (100) exhibited a lower threading dislocation density as compared with those grown on Si (111) and SiO2. [Figure not available: see fulltext.]

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