Abstract
GaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy (MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si. As an effort to achieve further reduction in the residual strain, Indium-doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit stain in the GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.
| Original language | English |
|---|---|
| Pages (from-to) | 423-426 |
| Number of pages | 4 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 308 |
| DOIs | |
| Publication status | Published - 1993 |
| Event | Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: 1993 Apr 13 → 1993 Apr 15 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering