Growth of strain-free GaAs on Si/sapphire

Hyunchul Sohn, E. R. Weber, Jay Tu, J. S. Smith

Research output: Contribution to journalConference article

Abstract

GaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy (MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si. As an effort to achieve further reduction in the residual strain, Indium-doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit stain in the GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.

Original languageEnglish
Pages (from-to)423-426
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume308
Publication statusPublished - 1993 Dec 1
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 131993 Apr 15

Fingerprint

Aluminum Oxide
Sapphire
sapphire
Epitaxial layers
Buffer layers
Molecular beam epitaxy
Indium
indium
Photoluminescence
molecular beam epitaxy
buffers
photoluminescence
gallium arsenide
Coloring Agents
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sohn, Hyunchul ; Weber, E. R. ; Tu, Jay ; Smith, J. S. / Growth of strain-free GaAs on Si/sapphire. In: Materials Research Society Symposium - Proceedings. 1993 ; Vol. 308. pp. 423-426.
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Growth of strain-free GaAs on Si/sapphire. / Sohn, Hyunchul; Weber, E. R.; Tu, Jay; Smith, J. S.

In: Materials Research Society Symposium - Proceedings, Vol. 308, 01.12.1993, p. 423-426.

Research output: Contribution to journalConference article

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