Growth of strain-free GaAs on Si/sapphire

Hyunchul Sohn, E. R. Weber, Jay Tu, J. S. Smith

Research output: Contribution to journalConference articlepeer-review


GaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy (MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si. As an effort to achieve further reduction in the residual strain, Indium-doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit stain in the GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.

Original languageEnglish
Pages (from-to)423-426
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1993
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 131993 Apr 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Growth of strain-free GaAs on Si/sapphire'. Together they form a unique fingerprint.

Cite this