Growth of ZnSe on (100) GaAs by atomic layer epitaxy

C. D. Lee, B. H. Lim, C. Lim, H. L. Park, C. H. Chung, S. K. Chang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

ZnSe films have been grown on (100) oriented GaAs substrates by atomic layer epitaxy (ALE) using ZnCl2 and H2Se as source materials. The growth has been performed by using a hydride vapor phase epitaxial growth system. The epilayer thickness was examined for different growth conditions and was found to depend only on the number of substrate rotation cycles for the growth temperature near 450°C. Pseudomorphic ZnSe films on GaAs substrates were achieved by ALE for the growth of 1000 operating cycles. These films show good surface morphology and good crystallographic properties.

Original languageEnglish
Pages (from-to)148-151
Number of pages4
JournalJournal of Crystal Growth
Volume117
Issue number1-4
DOIs
Publication statusPublished - 1992 Feb 2

Bibliographical note

Funding Information:
The authors are indebted to Dr. Y. Kim of KIST for his help in the X-ray diffraction measurements and for valuable discussions. This research was supported by the KOSEF through SPRC in 1991.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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