Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam deposition

M. H. Cho, D. H. Ko, K. Jeong, S. W. Whangbo, C. N. Whang, S. C. Choi, S. J. Cho

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Abstract

We investigated the initial and epitaxial growth stage of Y2O3/Si(100) grown by reactive ionized cluster beam deposition, using x-ray diffraction (XRD), atomic force microscope, and reflection high-energy electron diffraction. We also investigated the crystalline structure of the films using transmission electron microscopy and XRD. The preferred growth direction of Y2O3 grown by an ion beam changed completely from the 〈111〉 to the 〈110〉 orientation in order to minimize the overall energy of the film as the substrate temperature increased. In addition to the kinetic energy of the deposited atoms, oxygen partial pressure and the substrate surface state also bear a relationship to the change in the preferred growth direction. The crystalline growth of Y2O3 film depends on the state of the surface at the initial growth stage, whether the Si surface was first exposed to oxygen or yttrium. In particular, the silicon oxide layer which formed on the Si surface during the initial growth stage played an important role in the epitaxial growth as well as the preferred growth direction of Y2O3 film.

Original languageEnglish
Pages (from-to)2909-2914
Number of pages6
JournalJournal of Applied Physics
Volume85
Issue number5
DOIs
Publication statusPublished - 1999 Jan 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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