Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001)

C. S. Shin, S. Rudenja, D. Gall, N. Hellgren, Taeyoon Lee, I. Petrov, J. E. Greene

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiNx(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N2 discharges. Further increases in fN2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.

Original languageEnglish
Pages (from-to)356-362
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1

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electrical resistivity
ultrahigh vacuum
sputtering
microstructure
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Shin, C. S. ; Rudenja, S. ; Gall, D. ; Hellgren, N. ; Lee, Taeyoon ; Petrov, I. ; Greene, J. E. / Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001). In: Journal of Applied Physics. 2004 ; Vol. 95, No. 1. pp. 356-362.
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Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001). / Shin, C. S.; Rudenja, S.; Gall, D.; Hellgren, N.; Lee, Taeyoon; Petrov, I.; Greene, J. E.

In: Journal of Applied Physics, Vol. 95, No. 1, 01.01.2004, p. 356-362.

Research output: Contribution to journalArticle

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