Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001)

C. S. Shin, S. Rudenja, D. Gall, N. Hellgren, T. Y. Lee, I. Petrov, J. E. Greene

Research output: Contribution to journalArticle

104 Citations (Scopus)

Abstract

Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiNx(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N2 discharges. Further increases in fN2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.

Original languageEnglish
Pages (from-to)356-362
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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