Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiNx(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N2 discharges. Further increases in fN2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)