H-Center and V-Center Defects in Hybrid Halide Perovskites

Lucy D. Whalley; Rachel Crespo-Otero; Aron Walsh

doi:10.1021/acsenergylett.7b00995

H-Center and V-Center Defects in Hybrid Halide Perovskites

Lucy D. Whalley, Rachel Crespo-Otero, Aron Walsh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

The self-trapping of holes with the formation of a molecular X₂ ^- anion is a well-established process in metal halide (MX) crystals, but V-center (2X^- + h⁺ X2^-) and H-center (X^- + Xi^- + h⁺ X2^-) defects have not yet been confirmed in halide perovskite semiconductors. The I₂ ^- split-interstitial defect is predicted to be a spin radical in CH₃NH₃PbI₃ with an optically excited state in the semiconductor band gap.

Original language	English
Pages (from-to)	2713-2714
Number of pages	2
Journal	ACS Energy Letters
Volume	2
Issue number	12
DOIs	https://doi.org/10.1021/acsenergylett.7b00995
Publication status	Published - 2017 Dec 8

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All Science Journal Classification (ASJC) codes

Chemistry (miscellaneous)
Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology
Materials Chemistry

Cite this

Whalley, L. D., Crespo-Otero, R., & Walsh, A. (2017). H-Center and V-Center Defects in Hybrid Halide Perovskites. ACS Energy Letters, 2(12), 2713-2714. https://doi.org/10.1021/acsenergylett.7b00995

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Access to Document

10.1021/acsenergylett.7b00995