Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation

C. S. Yeo; Kwun Bum Chung; J. H. Song; K. H. Chae; Jin Seong Park; J. H. Song; Sang Han Park; Mann Ho Cho

doi:10.3938/jkps.62.781

Hall mobility manipulation in TiO_2-x semiconductor films by hydrogen-ion irradiation

C. S. Yeo, Kwun Bum Chung, J. H. Song, K. H. Chae, Jin Seong Park, J. H. Song, Sang Han Park, Mann Ho Cho

Department of Physics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The effects of different irradiation doses of hydrogen ions on TiO_2-x semiconductor films were investigated. The total doses were controlled between ~10¹⁴ and ~10¹⁵ atom/cm² at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.

Original language	English
Pages (from-to)	781-786
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	62
Issue number	5
DOIs	https://doi.org/10.3938/jkps.62.781
Publication status	Published - 2013 Mar 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.3938/jkps.62.781

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Yeo, C. S., Chung, K. B., Song, J. H., Chae, K. H., Park, J. S., Song, J. H., Park, S. H., & Cho, M. H. (2013). Hall mobility manipulation in TiO_2-x semiconductor films by hydrogen-ion irradiation. Journal of the Korean Physical Society, 62(5), 781-786. https://doi.org/10.3938/jkps.62.781

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abstract = "The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between ~1014 and ~1015 atom/cm2 at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.",

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AU - Yeo, C. S.

AU - Chung, Kwun Bum

AU - Song, J. H.

AU - Chae, K. H.

AU - Park, Jin Seong

AU - Song, J. H.

AU - Park, Sang Han

AU - Cho, Mann Ho

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