Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation

C. S. Yeo, Kwun Bum Chung, J. H. Song, K. H. Chae, Jin Seong Park, J. H. Song, Sang Han Park, Mann Ho Cho

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Abstract

The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between ~1014 and ~1015 atom/cm2 at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.

Original languageEnglish
Pages (from-to)781-786
Number of pages6
JournalJournal of the Korean Physical Society
Volume62
Issue number5
DOIs
Publication statusPublished - 2013 Mar 19

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yeo, C. S., Chung, K. B., Song, J. H., Chae, K. H., Park, J. S., Song, J. H., Park, S. H., & Cho, M. H. (2013). Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation. Journal of the Korean Physical Society, 62(5), 781-786. https://doi.org/10.3938/jkps.62.781