Abstract
The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between ~1014 and ~1015 atom/cm2 at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.
| Original language | English |
|---|---|
| Pages (from-to) | 781-786 |
| Number of pages | 6 |
| Journal | Journal of the Korean Physical Society |
| Volume | 62 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 Mar 19 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation. / Yeo, C. S.; Chung, Kwun Bum; Song, J. H.; Chae, K. H.; Park, Jin Seong; Song, J. H.; Park, Sang Han; Cho, Mann Ho.
In: Journal of the Korean Physical Society, Vol. 62, No. 5, 19.03.2013, p. 781-786.Research output: Contribution to journal › Article
TY - JOUR
T1 - Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation
AU - Yeo, C. S.
AU - Chung, Kwun Bum
AU - Song, J. H.
AU - Chae, K. H.
AU - Park, Jin Seong
AU - Song, J. H.
AU - Park, Sang Han
AU - Cho, Mann Ho
PY - 2013/3/19
Y1 - 2013/3/19
N2 - The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between ~1014 and ~1015 atom/cm2 at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.
AB - The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between ~1014 and ~1015 atom/cm2 at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.
UR - http://www.scopus.com/inward/record.url?scp=84874983149&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874983149&partnerID=8YFLogxK
U2 - 10.3938/jkps.62.781
DO - 10.3938/jkps.62.781
M3 - Article
AN - SCOPUS:84874983149
VL - 62
SP - 781
EP - 786
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 5
ER -