Hall transport of divalent metal ion modified DNA lattices

Sreekantha Reddy Dugasani, Keun Woo Lee, Si Joon Kim, Sanghyun Yoo, Bramaramba Gnapareddy, Joohye Jung, Tae Soo Jung, Saima Bashar, Hyun Jae Kim, Sung Ha Park

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We investigate the Hall transport characteristics of double-crossover divalent metal ion (Cu2+, Ni2+, Zn2+, and Co2+)-modified DNA (M-DNA) lattices grown on silica via substrate-assisted growth. The electronic characteristics of the M-DNA lattices are investigated by varying the concentration of the metal ions and then conducting Hall measurements, including resistivity, Hall mobility, carrier concentration, and magneto resistance. The tendency of the resistivity and Hall mobility was to initially decrease as the ion concentration increased, until reaching the saturation concentration (Cs) of each metal ion, and then to increase as the ion concentration increased further. On the other hand, the carrier concentration revealed the opposite tendency as the resistivity and Hall mobility. The specific binding (≤Cs) and the nonspecific aggregates (>Cs) of the ions into the DNA lattices were significantly affected by the Hall characteristics. The numerical ranges of the Hall parameters revealed that the M-DNA lattices with metal ions had semiconductor-like characteristics. Consequently, the distinct characteristics of the electrical transport through M-DNA lattices will provide useful information on the practical use of such structures in physical devices and chemical sensors.

Original languageEnglish
Article number263702
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 2015 Jun 29


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Dugasani, S. R., Lee, K. W., Kim, S. J., Yoo, S., Gnapareddy, B., Jung, J., Jung, T. S., Bashar, S., Kim, H. J., & Park, S. H. (2015). Hall transport of divalent metal ion modified DNA lattices. Applied Physics Letters, 106(26), [263702]. https://doi.org/10.1063/1.4923377