Hall transport of divalent metal ion modified DNA lattices

Sreekantha Reddy Dugasani, Keun Woo Lee, Si Joon Kim, Sanghyun Yoo, Bramaramba Gnapareddy, Joohye Jung, Tae Soo Jung, Saima Bashar, Hyun Jae Kim, Sung Ha Park

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigate the Hall transport characteristics of double-crossover divalent metal ion (Cu2+, Ni2+, Zn2+, and Co2+)-modified DNA (M-DNA) lattices grown on silica via substrate-assisted growth. The electronic characteristics of the M-DNA lattices are investigated by varying the concentration of the metal ions and then conducting Hall measurements, including resistivity, Hall mobility, carrier concentration, and magneto resistance. The tendency of the resistivity and Hall mobility was to initially decrease as the ion concentration increased, until reaching the saturation concentration (Cs) of each metal ion, and then to increase as the ion concentration increased further. On the other hand, the carrier concentration revealed the opposite tendency as the resistivity and Hall mobility. The specific binding (≤Cs) and the nonspecific aggregates (>Cs) of the ions into the DNA lattices were significantly affected by the Hall characteristics. The numerical ranges of the Hall parameters revealed that the M-DNA lattices with metal ions had semiconductor-like characteristics. Consequently, the distinct characteristics of the electrical transport through M-DNA lattices will provide useful information on the practical use of such structures in physical devices and chemical sensors.

Original languageEnglish
Article number263702
JournalApplied Physics Letters
Volume106
Issue number26
DOIs
Publication statusPublished - 2015 Jun 29

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metal ions
deoxyribonucleic acid
ion concentration
electrical resistivity
tendencies
carrier mobility
crossovers
silicon dioxide
saturation
conduction
sensors
electronics
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Dugasani, S. R., Lee, K. W., Kim, S. J., Yoo, S., Gnapareddy, B., Jung, J., ... Park, S. H. (2015). Hall transport of divalent metal ion modified DNA lattices. Applied Physics Letters, 106(26), [263702]. https://doi.org/10.1063/1.4923377
Dugasani, Sreekantha Reddy ; Lee, Keun Woo ; Kim, Si Joon ; Yoo, Sanghyun ; Gnapareddy, Bramaramba ; Jung, Joohye ; Jung, Tae Soo ; Bashar, Saima ; Kim, Hyun Jae ; Park, Sung Ha. / Hall transport of divalent metal ion modified DNA lattices. In: Applied Physics Letters. 2015 ; Vol. 106, No. 26.
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Dugasani, SR, Lee, KW, Kim, SJ, Yoo, S, Gnapareddy, B, Jung, J, Jung, TS, Bashar, S, Kim, HJ & Park, SH 2015, 'Hall transport of divalent metal ion modified DNA lattices', Applied Physics Letters, vol. 106, no. 26, 263702. https://doi.org/10.1063/1.4923377

Hall transport of divalent metal ion modified DNA lattices. / Dugasani, Sreekantha Reddy; Lee, Keun Woo; Kim, Si Joon; Yoo, Sanghyun; Gnapareddy, Bramaramba; Jung, Joohye; Jung, Tae Soo; Bashar, Saima; Kim, Hyun Jae; Park, Sung Ha.

In: Applied Physics Letters, Vol. 106, No. 26, 263702, 29.06.2015.

Research output: Contribution to journalArticle

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Dugasani SR, Lee KW, Kim SJ, Yoo S, Gnapareddy B, Jung J et al. Hall transport of divalent metal ion modified DNA lattices. Applied Physics Letters. 2015 Jun 29;106(26). 263702. https://doi.org/10.1063/1.4923377