Heat Exchanger Method (HEM) grown GaAs single crystals and their homogeneity

T. J. Kim, H. K. Kim, Soo Kyung Chang, H. L. Park, C. H. Chung

Research output: Contribution to journalLetter

2 Citations (Scopus)

Abstract

GaAs single crystals, 32 mm in diameter and 32 mm in length, were grown by the heat exchanger method (HEM). A 〈111〉 seed crystal was used with helium gas for the heat exchanger. The optimum conditions for single crystal growth were determined to be growth time of 8.5 h, growth rate less than 4 mm/h and a helium flow rate smaller than 23.6 l/min. The Hall effect was measured by the Van der Pauw method about the radial and axial directions. From this measurement the homogeneity was known, and the Hall mobility and carrier concentration at room temperature were found to be 4580 cm2/V·s and 3.5×1016 cm-3, respectively. An EPD measurement was made to investigate the crystal quality. The value was 2×103 cm-2 at the center, but increased toward the edge to a value of 1×104 cm-2.

Original languageEnglish
Pages (from-to)531-533
Number of pages3
JournalJournal of Crystal Growth
Volume98
Issue number3
DOIs
Publication statusPublished - 1989 Nov 2

Fingerprint

Helium
heat exchangers
homogeneity
Heat exchangers
helium
Single crystals
Hall mobility
Crystals
single crystals
Hall effect
Crystallization
Crystal growth
crystals
Carrier concentration
crystal growth
seeds
flow velocity
Gases
Flow rate
room temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kim, T. J. ; Kim, H. K. ; Chang, Soo Kyung ; Park, H. L. ; Chung, C. H. / Heat Exchanger Method (HEM) grown GaAs single crystals and their homogeneity. In: Journal of Crystal Growth. 1989 ; Vol. 98, No. 3. pp. 531-533.
@article{fd52cd4f0f55472c8961750df6cea020,
title = "Heat Exchanger Method (HEM) grown GaAs single crystals and their homogeneity",
abstract = "GaAs single crystals, 32 mm in diameter and 32 mm in length, were grown by the heat exchanger method (HEM). A 〈111〉 seed crystal was used with helium gas for the heat exchanger. The optimum conditions for single crystal growth were determined to be growth time of 8.5 h, growth rate less than 4 mm/h and a helium flow rate smaller than 23.6 l/min. The Hall effect was measured by the Van der Pauw method about the radial and axial directions. From this measurement the homogeneity was known, and the Hall mobility and carrier concentration at room temperature were found to be 4580 cm2/V·s and 3.5×1016 cm-3, respectively. An EPD measurement was made to investigate the crystal quality. The value was 2×103 cm-2 at the center, but increased toward the edge to a value of 1×104 cm-2.",
author = "Kim, {T. J.} and Kim, {H. K.} and Chang, {Soo Kyung} and Park, {H. L.} and Chung, {C. H.}",
year = "1989",
month = "11",
day = "2",
doi = "10.1016/0022-0248(89)90171-1",
language = "English",
volume = "98",
pages = "531--533",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3",

}

Heat Exchanger Method (HEM) grown GaAs single crystals and their homogeneity. / Kim, T. J.; Kim, H. K.; Chang, Soo Kyung; Park, H. L.; Chung, C. H.

In: Journal of Crystal Growth, Vol. 98, No. 3, 02.11.1989, p. 531-533.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Heat Exchanger Method (HEM) grown GaAs single crystals and their homogeneity

AU - Kim, T. J.

AU - Kim, H. K.

AU - Chang, Soo Kyung

AU - Park, H. L.

AU - Chung, C. H.

PY - 1989/11/2

Y1 - 1989/11/2

N2 - GaAs single crystals, 32 mm in diameter and 32 mm in length, were grown by the heat exchanger method (HEM). A 〈111〉 seed crystal was used with helium gas for the heat exchanger. The optimum conditions for single crystal growth were determined to be growth time of 8.5 h, growth rate less than 4 mm/h and a helium flow rate smaller than 23.6 l/min. The Hall effect was measured by the Van der Pauw method about the radial and axial directions. From this measurement the homogeneity was known, and the Hall mobility and carrier concentration at room temperature were found to be 4580 cm2/V·s and 3.5×1016 cm-3, respectively. An EPD measurement was made to investigate the crystal quality. The value was 2×103 cm-2 at the center, but increased toward the edge to a value of 1×104 cm-2.

AB - GaAs single crystals, 32 mm in diameter and 32 mm in length, were grown by the heat exchanger method (HEM). A 〈111〉 seed crystal was used with helium gas for the heat exchanger. The optimum conditions for single crystal growth were determined to be growth time of 8.5 h, growth rate less than 4 mm/h and a helium flow rate smaller than 23.6 l/min. The Hall effect was measured by the Van der Pauw method about the radial and axial directions. From this measurement the homogeneity was known, and the Hall mobility and carrier concentration at room temperature were found to be 4580 cm2/V·s and 3.5×1016 cm-3, respectively. An EPD measurement was made to investigate the crystal quality. The value was 2×103 cm-2 at the center, but increased toward the edge to a value of 1×104 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=0024772109&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024772109&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(89)90171-1

DO - 10.1016/0022-0248(89)90171-1

M3 - Letter

VL - 98

SP - 531

EP - 533

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3

ER -