Heteroepitaxial van der Waals semiconductor superlattices

Gangtae Jin, Chang Soo Lee, Odongo F.N. Okello, Suk Ho Lee, Min Yeong Park, Soonyoung Cha, Seung Young Seo, Gunho Moon, Seok Young Min, Dong Hwan Yang, Cheolhee Han, Hyungju Ahn, Jekwan Lee, Hyunyong Choi, Jonghwan Kim, Si Young Choi, Moon Ho Jo

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we report the atomic layer-by-layer epitaxial growth of vdW SLs with programmable stacking periodicities, composed of more than two kinds of dissimilar TMDC MLs, such as MoS2, WS2 and WSe2. Using kinetics-controlled vdW epitaxy in the near-equilibrium limit by metal–organic chemical vapour depositions, we achieved precise ML-by-ML stacking, free of interlayer atomic mixing, which resulted in tunable two-dimensional vdW electronic systems. As an example, by exploiting the series of type II band alignments at coherent two-dimensional vdW heterointerfaces, we demonstrated valley-polarized carrier excitations—one of the most distinctive electronic features in vdW ML semiconductors—which scale with the stack numbers n in our (MoS2/WS2)n SLs on optical excitations.

Original languageEnglish
Pages (from-to)1092-1098
Number of pages7
JournalNature Nanotechnology
Issue number10
Publication statusPublished - 2021 Oct

Bibliographical note

Funding Information:
This work was supported by the Institute for Basic Science (IBS), Korea, under Project Code IBS-R014-A1.

Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Nature Limited.

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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