Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

Jae Cheol Shin, Parsian K. Mohseni, Ki Jun Yu, Stephanie Tomasulo, Kyle H. Montgomery, Minjoo L. Lee, John A. Rogers, Xiuling Li

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Abstract

We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa 1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa 1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

Original languageEnglish
Pages (from-to)11074-11079
Number of pages6
JournalACS Nano
Volume6
Issue number12
DOIs
Publication statusPublished - 2012 Dec 21

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Shin, J. C., Mohseni, P. K., Yu, K. J., Tomasulo, S., Montgomery, K. H., Lee, M. L., Rogers, J. A., & Li, X. (2012). Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement. ACS Nano, 6(12), 11074-11079. https://doi.org/10.1021/nn304784y