Heterojunction Photoanode of Atomic-Layer-Deposited MoS2 on Single-Crystalline CdS Nanorod Arrays

Thi Anh Ho, Changdeuck Bae, Jemee Joe, Hyunwoo Yang, Sungsoon Kim, Jong Hyeok Park, Hyunjung Shin

Research output: Contribution to journalArticle

Abstract

Cadmium sulfide (CdS) is a semiconducting absorber for photoelectrochemical (PEC) hydrogen production with suitable electronic band structures. However, it suffers from severe photocorrosion and rapid charge recombination during the desired PEC reactions. Herein, we describe the identification of the optimal junction thickness of CdS/MoS2 core/sheath heterojunction nanostructures by employing atomic layer deposition (ALD) techniques. ALD-grown MoS2 sheath layers with different thicknesses were realized on single-crystalline CdS nanorod (NR) arrays on transparent conducting oxide substrates. We further monitored the resulting solar H2 evolution performance with our heterojunction photoanodes. The results showed that the junction thickness of MoS2 plays a key role in the reduction of photocorrosion and the enhanced photocurrent density by optimizing the charge separation. A better saturation photocurrent (∼46%) was obtained with the 7 nm-thick MoS2@CdS NRs than that with the bare CdS NRs. Moreover, the external quantum efficiency was increased twofold over that of the pristine CdS NRs. The ALD-grown MoS2@CdS heterojunction structures provides an efficient and versatile platform for hydrogen production when combining ALD-grown MoS2 with ideal semiconducting absorbers.

Original languageEnglish
Pages (from-to)37586-37594
Number of pages9
JournalACS Applied Materials and Interfaces
Volume11
Issue number41
DOIs
Publication statusPublished - 2019 Oct 16

Fingerprint

Cadmium sulfide
Nanorods
Heterojunctions
Crystalline materials
Atomic layer deposition
Hydrogen production
Photocurrents
cadmium sulfide
Quantum efficiency
Band structure
Oxides
Nanostructures
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Ho, Thi Anh ; Bae, Changdeuck ; Joe, Jemee ; Yang, Hyunwoo ; Kim, Sungsoon ; Park, Jong Hyeok ; Shin, Hyunjung. / Heterojunction Photoanode of Atomic-Layer-Deposited MoS2 on Single-Crystalline CdS Nanorod Arrays. In: ACS Applied Materials and Interfaces. 2019 ; Vol. 11, No. 41. pp. 37586-37594.
@article{8d5d699ea1d74069bcc6757fbcc2008b,
title = "Heterojunction Photoanode of Atomic-Layer-Deposited MoS2 on Single-Crystalline CdS Nanorod Arrays",
abstract = "Cadmium sulfide (CdS) is a semiconducting absorber for photoelectrochemical (PEC) hydrogen production with suitable electronic band structures. However, it suffers from severe photocorrosion and rapid charge recombination during the desired PEC reactions. Herein, we describe the identification of the optimal junction thickness of CdS/MoS2 core/sheath heterojunction nanostructures by employing atomic layer deposition (ALD) techniques. ALD-grown MoS2 sheath layers with different thicknesses were realized on single-crystalline CdS nanorod (NR) arrays on transparent conducting oxide substrates. We further monitored the resulting solar H2 evolution performance with our heterojunction photoanodes. The results showed that the junction thickness of MoS2 plays a key role in the reduction of photocorrosion and the enhanced photocurrent density by optimizing the charge separation. A better saturation photocurrent ({\^a}ˆ¼46{\%}) was obtained with the 7 nm-thick MoS2@CdS NRs than that with the bare CdS NRs. Moreover, the external quantum efficiency was increased twofold over that of the pristine CdS NRs. The ALD-grown MoS2@CdS heterojunction structures provides an efficient and versatile platform for hydrogen production when combining ALD-grown MoS2 with ideal semiconducting absorbers.",
author = "Ho, {Thi Anh} and Changdeuck Bae and Jemee Joe and Hyunwoo Yang and Sungsoon Kim and Park, {Jong Hyeok} and Hyunjung Shin",
year = "2019",
month = "10",
day = "16",
doi = "10.1021/acsami.9b11178",
language = "English",
volume = "11",
pages = "37586--37594",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "41",

}

Heterojunction Photoanode of Atomic-Layer-Deposited MoS2 on Single-Crystalline CdS Nanorod Arrays. / Ho, Thi Anh; Bae, Changdeuck; Joe, Jemee; Yang, Hyunwoo; Kim, Sungsoon; Park, Jong Hyeok; Shin, Hyunjung.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 41, 16.10.2019, p. 37586-37594.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Heterojunction Photoanode of Atomic-Layer-Deposited MoS2 on Single-Crystalline CdS Nanorod Arrays

AU - Ho, Thi Anh

AU - Bae, Changdeuck

AU - Joe, Jemee

AU - Yang, Hyunwoo

AU - Kim, Sungsoon

AU - Park, Jong Hyeok

AU - Shin, Hyunjung

PY - 2019/10/16

Y1 - 2019/10/16

N2 - Cadmium sulfide (CdS) is a semiconducting absorber for photoelectrochemical (PEC) hydrogen production with suitable electronic band structures. However, it suffers from severe photocorrosion and rapid charge recombination during the desired PEC reactions. Herein, we describe the identification of the optimal junction thickness of CdS/MoS2 core/sheath heterojunction nanostructures by employing atomic layer deposition (ALD) techniques. ALD-grown MoS2 sheath layers with different thicknesses were realized on single-crystalline CdS nanorod (NR) arrays on transparent conducting oxide substrates. We further monitored the resulting solar H2 evolution performance with our heterojunction photoanodes. The results showed that the junction thickness of MoS2 plays a key role in the reduction of photocorrosion and the enhanced photocurrent density by optimizing the charge separation. A better saturation photocurrent (∼46%) was obtained with the 7 nm-thick MoS2@CdS NRs than that with the bare CdS NRs. Moreover, the external quantum efficiency was increased twofold over that of the pristine CdS NRs. The ALD-grown MoS2@CdS heterojunction structures provides an efficient and versatile platform for hydrogen production when combining ALD-grown MoS2 with ideal semiconducting absorbers.

AB - Cadmium sulfide (CdS) is a semiconducting absorber for photoelectrochemical (PEC) hydrogen production with suitable electronic band structures. However, it suffers from severe photocorrosion and rapid charge recombination during the desired PEC reactions. Herein, we describe the identification of the optimal junction thickness of CdS/MoS2 core/sheath heterojunction nanostructures by employing atomic layer deposition (ALD) techniques. ALD-grown MoS2 sheath layers with different thicknesses were realized on single-crystalline CdS nanorod (NR) arrays on transparent conducting oxide substrates. We further monitored the resulting solar H2 evolution performance with our heterojunction photoanodes. The results showed that the junction thickness of MoS2 plays a key role in the reduction of photocorrosion and the enhanced photocurrent density by optimizing the charge separation. A better saturation photocurrent (∼46%) was obtained with the 7 nm-thick MoS2@CdS NRs than that with the bare CdS NRs. Moreover, the external quantum efficiency was increased twofold over that of the pristine CdS NRs. The ALD-grown MoS2@CdS heterojunction structures provides an efficient and versatile platform for hydrogen production when combining ALD-grown MoS2 with ideal semiconducting absorbers.

UR - http://www.scopus.com/inward/record.url?scp=85073148858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073148858&partnerID=8YFLogxK

U2 - 10.1021/acsami.9b11178

DO - 10.1021/acsami.9b11178

M3 - Article

C2 - 31580636

AN - SCOPUS:85073148858

VL - 11

SP - 37586

EP - 37594

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 41

ER -