The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.
Bibliographical noteFunding Information:
This work was partially supported by the National Science Foundation (DMR-1124894) and by the FAME Center, one of the six centres of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. G.H.L. and M.H. acknowledge support from Basic Science Research Program (2014R1A1A1004632) (G.H.L.) and the Nano Material Technology Development Program (2012M3A7B4049966) (M.H.) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning.
All Science Journal Classification (ASJC) codes
- Materials Science(all)