Here we demonstrate the deposition of a high-k dielectric material on graphene using hexagonal boron nitride (h-BN) nanosheets as a buffer layer. The presence of an h-BN layer on top of the graphene facilitated the growth of high-quality Al2O3 by atomic layer deposition (ALD). Simulation results also support the experimental observations and provide an explanation for the suitability of h-BN as a buffer layer in terms of mixed ionic-covalent B-N bonding. Additionally, h-BN works as a protective shield to prevent graphene oxidation during ALD of Al2O3 for the fabrication of graphene-based devices. Finally, triboelectric nanogenerators (TNGs) based on both Al2O3/h-BN/graphene and Al2O3/graphene structures are demonstrated for further confirming the importance of h-BN for synthesizing high-quality Al2O3 on graphene. It was found that the Al2O3/h-BN/graphene-based TNG reveals meaningful electric power generation under a mechanical friction, while no significant electric power output from the Al2O3/graphene-based TNG is obtained, indicating high charge storage capacity of the dielectric Al2O3 layer on h-BN.
|Number of pages||11|
|Publication status||Published - 2015 Mar 1|
Bibliographical noteFunding Information:
This work was financially supported by Basic Science Research Program ( 2012R1A2A1A01002787 , 2009-0083540 ) and the Center for Advanced Soft-Electronics as Global Frontier Project ( 2013M3A6A5073177 ) through the National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science, ICT and Future Planning .
© 2015 Elsevier Ltd.
All Science Journal Classification (ASJC) codes
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Electrical and Electronic Engineering