Hf-aluminate films with and without an interfacial layer during growth and postannealing structural and electrical characteristics

K. B. Chung, H. S. Chang, S. H. Lee, C. N. Whang, D. H. Ko, H. Kim, D. W. Moon, M. H. Cho

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The structural and electrical characteristics resulting from an interfacial layer of Hf-aluminate films grown by atomic layer deposition were investigated using medium energy ion scattering spectroscopy and electrical measurements. The Hf-aluminate films with an interfacial layer of SiO2 grew with higher Hf contents and lower interdiffusion of Si than the film without an interfacial SiO2 layer. In Hf-aluminate films with an interfacial layer of SiO2, the thickness of HfO2 decreased slightly after postannealing as a result of crystallization. In films without an interfacial layer of SiO2, the structural rearrangement was observed due to the interdiffusion of Si with no change in thickness. The structural changes affected electrical properties such as the oxide trap charge and the interfacial trap charge. Moreover, reoxidation of the Hf-aluminate films without an interfacial layer of SiO2 caused a dramatic increase in the thickness of the interfacial region. This resulted in a positive shift of flatband voltage.

Original languageEnglish
Pages (from-to)F51-F54
JournalElectrochemical and Solid-State Letters
Volume8
Issue number11
DOIs
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Hf-aluminate films with and without an interfacial layer during growth and postannealing structural and electrical characteristics'. Together they form a unique fingerprint.

Cite this