Hf-aluminate films with and without an interfacial layer during growth and postannealing structural and electrical characteristics

K. B. Chung, H. S. Chang, S. H. Lee, C. N. Whang, Dae Hong Ko, H. Kim, D. W. Moon, Mann-Ho Cho

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The structural and electrical characteristics resulting from an interfacial layer of Hf-aluminate films grown by atomic layer deposition were investigated using medium energy ion scattering spectroscopy and electrical measurements. The Hf-aluminate films with an interfacial layer of SiO2 grew with higher Hf contents and lower interdiffusion of Si than the film without an interfacial SiO2 layer. In Hf-aluminate films with an interfacial layer of SiO2, the thickness of HfO2 decreased slightly after postannealing as a result of crystallization. In films without an interfacial layer of SiO2, the structural rearrangement was observed due to the interdiffusion of Si with no change in thickness. The structural changes affected electrical properties such as the oxide trap charge and the interfacial trap charge. Moreover, reoxidation of the Hf-aluminate films without an interfacial layer of SiO2 caused a dramatic increase in the thickness of the interfacial region. This resulted in a positive shift of flatband voltage.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number11
DOIs
Publication statusPublished - 2005 Nov 21

Fingerprint

traps
Atomic layer deposition
ion scattering
atomic layer epitaxy
Crystallization
Oxides
electrical measurement
Electric properties
electrical properties
Spectroscopy
Scattering
Ions
crystallization
oxides
shift
Electric potential
electric potential
spectroscopy
energy

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Hf-aluminate films with and without an interfacial layer during growth and postannealing structural and electrical characteristics",
abstract = "The structural and electrical characteristics resulting from an interfacial layer of Hf-aluminate films grown by atomic layer deposition were investigated using medium energy ion scattering spectroscopy and electrical measurements. The Hf-aluminate films with an interfacial layer of SiO2 grew with higher Hf contents and lower interdiffusion of Si than the film without an interfacial SiO2 layer. In Hf-aluminate films with an interfacial layer of SiO2, the thickness of HfO2 decreased slightly after postannealing as a result of crystallization. In films without an interfacial layer of SiO2, the structural rearrangement was observed due to the interdiffusion of Si with no change in thickness. The structural changes affected electrical properties such as the oxide trap charge and the interfacial trap charge. Moreover, reoxidation of the Hf-aluminate films without an interfacial layer of SiO2 caused a dramatic increase in the thickness of the interfacial region. This resulted in a positive shift of flatband voltage.",
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Hf-aluminate films with and without an interfacial layer during growth and postannealing structural and electrical characteristics. / Chung, K. B.; Chang, H. S.; Lee, S. H.; Whang, C. N.; Ko, Dae Hong; Kim, H.; Moon, D. W.; Cho, Mann-Ho.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 11, 21.11.2005.

Research output: Contribution to journalArticle

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T1 - Hf-aluminate films with and without an interfacial layer during growth and postannealing structural and electrical characteristics

AU - Chung, K. B.

AU - Chang, H. S.

AU - Lee, S. H.

AU - Whang, C. N.

AU - Ko, Dae Hong

AU - Kim, H.

AU - Moon, D. W.

AU - Cho, Mann-Ho

PY - 2005/11/21

Y1 - 2005/11/21

N2 - The structural and electrical characteristics resulting from an interfacial layer of Hf-aluminate films grown by atomic layer deposition were investigated using medium energy ion scattering spectroscopy and electrical measurements. The Hf-aluminate films with an interfacial layer of SiO2 grew with higher Hf contents and lower interdiffusion of Si than the film without an interfacial SiO2 layer. In Hf-aluminate films with an interfacial layer of SiO2, the thickness of HfO2 decreased slightly after postannealing as a result of crystallization. In films without an interfacial layer of SiO2, the structural rearrangement was observed due to the interdiffusion of Si with no change in thickness. The structural changes affected electrical properties such as the oxide trap charge and the interfacial trap charge. Moreover, reoxidation of the Hf-aluminate films without an interfacial layer of SiO2 caused a dramatic increase in the thickness of the interfacial region. This resulted in a positive shift of flatband voltage.

AB - The structural and electrical characteristics resulting from an interfacial layer of Hf-aluminate films grown by atomic layer deposition were investigated using medium energy ion scattering spectroscopy and electrical measurements. The Hf-aluminate films with an interfacial layer of SiO2 grew with higher Hf contents and lower interdiffusion of Si than the film without an interfacial SiO2 layer. In Hf-aluminate films with an interfacial layer of SiO2, the thickness of HfO2 decreased slightly after postannealing as a result of crystallization. In films without an interfacial layer of SiO2, the structural rearrangement was observed due to the interdiffusion of Si with no change in thickness. The structural changes affected electrical properties such as the oxide trap charge and the interfacial trap charge. Moreover, reoxidation of the Hf-aluminate films without an interfacial layer of SiO2 caused a dramatic increase in the thickness of the interfacial region. This resulted in a positive shift of flatband voltage.

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