Hf-doping effect on the thermoelectric transport properties of n-Type Cu0.01Bi2Te2.7Se0.3

Jeong Yun Hwang; Sura Choi; Sang Il Kim; Jae Hong Lim; Soon Mok Choi; Heesun Yang; Hyun Sik Kim; Kyu Hyoung Lee

doi:10.3390/app10144875

Hf-doping effect on the thermoelectric transport properties of n-Type Cu_0.01Bi₂Te_2.7Se_0.3

Jeong Yun Hwang, Sura Choi, Sang Il Kim, Jae Hong Lim, Soon Mok Choi, Heesun Yang, Hyun Sik Kim, Kyu Hyoung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Polycrystalline bulks of Hf-doped Cu_0.01Bi₂Te_2.7Se_0.3 are prepared via a conventional melt-solidification process and subsequent spark plasma sintering technology, and their thermoelectric performances are evaluated. To elucidate the effect of Hf-doping on the thermoelectric properties of n-type Cu_0.01Bi₂Te_2.7Se_0.3, electronic and thermal transport parameters are estimated from the measured data. An enlarged density-of-states effective mass (from ~0.92 m₀ to ~1.24 m₀) is obtained due to the band modification, and the power factor is improved by Hf-doping benefitting from the increase in carrier concentration while retaining carrier mobility. Additionally, lattice thermal conductivity is reduced due to the intensified point defect phonon scattering that originated from the mass difference between Bi and Hf. Resultantly, a peak thermoelectric figure of merit zT of 0.83 is obtained at 320 K for Cu_0.01Bi_1.925Hf_0.075Te_2.7Se_0.3, which is a ~12% enhancement compared to that of the pristine Cu_0.01Bi₂Te_2.7Se_0.3.

Original language	English
Article number	4875
Journal	Applied Sciences (Switzerland)
Volume	10
Issue number	14
DOIs	https://doi.org/10.3390/app10144875
Publication status	Published - 2020 Jul

Bibliographical note

Funding Information:
This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (Grant 2013M3A6B1078870). This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A6A1A11055660 and NRF-2015R1A6A1A03031833).

Funding Information:
Γ = x(1 − x) + ε  authors have read and agreed to thepublished vMersion of the manuascript.  pure Funding: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface TMhautse,ritahlse (κGlatFHreIMdu) cptrioocjtne (GbryanHt f2-0d1o3pMin3Ag6mBi1g0h78t8b7e0T)rh.e ilsa rteesdeabrcohtw haws istuhpmpoarstsedfl buyc tBsuiaac tSiocinenc(eb yRetsheearactho mic

Publisher Copyright:
© 2020 by the authors.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Instrumentation
Engineering(all)
Process Chemistry and Technology
Computer Science Applications
Fluid Flow and Transfer Processes

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10.3390/app10144875

Cite this

@article{34cc1fd3b51b463c8e71ba3dc46bc12c,

title = "Hf-doping effect on the thermoelectric transport properties of n-Type Cu0.01Bi2Te2.7Se0.3",

abstract = "Polycrystalline bulks of Hf-doped Cu0.01Bi2Te2.7Se0.3 are prepared via a conventional melt-solidification process and subsequent spark plasma sintering technology, and their thermoelectric performances are evaluated. To elucidate the effect of Hf-doping on the thermoelectric properties of n-type Cu0.01Bi2Te2.7Se0.3, electronic and thermal transport parameters are estimated from the measured data. An enlarged density-of-states effective mass (from ~0.92 m0 to ~1.24 m0) is obtained due to the band modification, and the power factor is improved by Hf-doping benefitting from the increase in carrier concentration while retaining carrier mobility. Additionally, lattice thermal conductivity is reduced due to the intensified point defect phonon scattering that originated from the mass difference between Bi and Hf. Resultantly, a peak thermoelectric figure of merit zT of 0.83 is obtained at 320 K for Cu0.01Bi1.925Hf0.075Te2.7Se0.3, which is a ~12% enhancement compared to that of the pristine Cu0.01Bi2Te2.7Se0.3.",

author = "Hwang, {Jeong Yun} and Sura Choi and Kim, {Sang Il} and Lim, {Jae Hong} and Choi, {Soon Mok} and Heesun Yang and Kim, {Hyun Sik} and Lee, {Kyu Hyoung}",

note = "Funding Information: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (Grant 2013M3A6B1078870). This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A6A1A11055660 and NRF-2015R1A6A1A03031833). Funding Information: Γ = x(1 − x) + ε  authors have read and agreed to thepublished vMersion of the manuascript.  pure Funding: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface TMhautse,ritahlse (κGlatFHreIMdu) cptrioocjtne (GbryanHt f2-0d1o3pMin3Ag6mBi1g0h78t8b7e0T)rh.e ilsa rteesdeabrcohtw haws istuhpmpoarstsedfl buyc tBsuiaac tSiocinenc(eb yRetsheearactho mic Publisher Copyright: {\textcopyright} 2020 by the authors.",

year = "2020",

month = jul,

doi = "10.3390/app10144875",

language = "English",

volume = "10",

journal = "Applied Sciences (Switzerland)",

issn = "2076-3417",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "14",

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TY - JOUR

T1 - Hf-doping effect on the thermoelectric transport properties of n-Type Cu0.01Bi2Te2.7Se0.3

AU - Hwang, Jeong Yun

AU - Choi, Sura

AU - Kim, Sang Il

AU - Lim, Jae Hong

AU - Choi, Soon Mok

AU - Yang, Heesun

AU - Kim, Hyun Sik

AU - Lee, Kyu Hyoung

N1 - Funding Information: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (Grant 2013M3A6B1078870). This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A6A1A11055660 and NRF-2015R1A6A1A03031833). Funding Information: Γ = x(1 − x) + ε  authors have read and agreed to thepublished vMersion of the manuascript.  pure Funding: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface TMhautse,ritahlse (κGlatFHreIMdu) cptrioocjtne (GbryanHt f2-0d1o3pMin3Ag6mBi1g0h78t8b7e0T)rh.e ilsa rteesdeabrcohtw haws istuhpmpoarstsedfl buyc tBsuiaac tSiocinenc(eb yRetsheearactho mic Publisher Copyright: © 2020 by the authors.

PY - 2020/7

Y1 - 2020/7

N2 - Polycrystalline bulks of Hf-doped Cu0.01Bi2Te2.7Se0.3 are prepared via a conventional melt-solidification process and subsequent spark plasma sintering technology, and their thermoelectric performances are evaluated. To elucidate the effect of Hf-doping on the thermoelectric properties of n-type Cu0.01Bi2Te2.7Se0.3, electronic and thermal transport parameters are estimated from the measured data. An enlarged density-of-states effective mass (from ~0.92 m0 to ~1.24 m0) is obtained due to the band modification, and the power factor is improved by Hf-doping benefitting from the increase in carrier concentration while retaining carrier mobility. Additionally, lattice thermal conductivity is reduced due to the intensified point defect phonon scattering that originated from the mass difference between Bi and Hf. Resultantly, a peak thermoelectric figure of merit zT of 0.83 is obtained at 320 K for Cu0.01Bi1.925Hf0.075Te2.7Se0.3, which is a ~12% enhancement compared to that of the pristine Cu0.01Bi2Te2.7Se0.3.

AB - Polycrystalline bulks of Hf-doped Cu0.01Bi2Te2.7Se0.3 are prepared via a conventional melt-solidification process and subsequent spark plasma sintering technology, and their thermoelectric performances are evaluated. To elucidate the effect of Hf-doping on the thermoelectric properties of n-type Cu0.01Bi2Te2.7Se0.3, electronic and thermal transport parameters are estimated from the measured data. An enlarged density-of-states effective mass (from ~0.92 m0 to ~1.24 m0) is obtained due to the band modification, and the power factor is improved by Hf-doping benefitting from the increase in carrier concentration while retaining carrier mobility. Additionally, lattice thermal conductivity is reduced due to the intensified point defect phonon scattering that originated from the mass difference between Bi and Hf. Resultantly, a peak thermoelectric figure of merit zT of 0.83 is obtained at 320 K for Cu0.01Bi1.925Hf0.075Te2.7Se0.3, which is a ~12% enhancement compared to that of the pristine Cu0.01Bi2Te2.7Se0.3.

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U2 - 10.3390/app10144875

DO - 10.3390/app10144875

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AN - SCOPUS:85088635309

VL - 10

JO - Applied Sciences (Switzerland)

JF - Applied Sciences (Switzerland)

SN - 2076-3417

IS - 14

M1 - 4875

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