HfO2 etching mechanism in inductively-coupled Cl2/Ar plasma

Moonkeun Kim, Alexander Efremov, Hyun Woo Lee, Hyung Ho Park, Munpyo Hong, Nam Ki Min, Kwang Ho Kwon

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Etching characteristics and the mechanism of HfO2 thin films in Cl2/Ar inductively-coupled plasma were investigated. The etch rate of HfO2 was measured as a function of the Cl2/Ar mixing ratio in the range of 0 to 100% Ar at a fixed gas pressure (6 mTorr), input power (700 W), and bias power (300 W). We found that an increase in the Ar mixing ratio resulted in a monotonic decrease in the HfO2 etch rate in the range of 10.3 to 0.7 nm/min while the etch rate of the photoresist increased from 152.1 to 375.0 nm/min for 0 to 100% Ar. To examine the etching mechanism of HfO2 films, we combined plasma diagnostics using Langmuir probes and quadrupole mass spectrometry with global (zero-dimensional) plasma modeling. We found that the HfO2 etching process was not controlled by ion-surface interaction kinetics and formally corresponds to the reaction rate-limited etch regime.

Original languageEnglish
Pages (from-to)6708-6711
Number of pages4
JournalThin Solid Films
Issue number20
Publication statusPublished - 2011 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Kim, M., Efremov, A., Lee, H. W., Park, H. H., Hong, M., Min, N. K., & Kwon, K. H. (2011). HfO2 etching mechanism in inductively-coupled Cl2/Ar plasma. Thin Solid Films, 519(20), 6708-6711. https://doi.org/10.1016/j.tsf.2011.04.059