HfO 2 etching mechanism in inductively-coupled Cl 2 /Ar plasma

Moonkeun Kim, Alexander Efremov, Hyun Woo Lee, Hyung-Ho Park, Munpyo Hong, Nam Ki Min, Kwang Ho Kwon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Etching characteristics and the mechanism of HfO 2 thin films in Cl 2 /Ar inductively-coupled plasma were investigated. The etch rate of HfO 2 was measured as a function of the Cl 2 /Ar mixing ratio in the range of 0 to 100% Ar at a fixed gas pressure (6 mTorr), input power (700 W), and bias power (300 W). We found that an increase in the Ar mixing ratio resulted in a monotonic decrease in the HfO 2 etch rate in the range of 10.3 to 0.7 nm/min while the etch rate of the photoresist increased from 152.1 to 375.0 nm/min for 0 to 100% Ar. To examine the etching mechanism of HfO 2 films, we combined plasma diagnostics using Langmuir probes and quadrupole mass spectrometry with global (zero-dimensional) plasma modeling. We found that the HfO 2 etching process was not controlled by ion-surface interaction kinetics and formally corresponds to the reaction rate-limited etch regime.

Original languageEnglish
Pages (from-to)6708-6711
Number of pages4
JournalThin Solid Films
Volume519
Issue number20
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

Etching
etching
mixing ratios
Plasmas
Plasma diagnostics
Langmuir probes
plasma diagnostics
Inductively coupled plasma
Photoresists
electrostatic probes
photoresists
surface reactions
Reaction rates
gas pressure
Mass spectrometry
reaction kinetics
mass spectroscopy
quadrupoles
Gases
Ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, M., Efremov, A., Lee, H. W., Park, H-H., Hong, M., Min, N. K., & Kwon, K. H. (2011). HfO 2 etching mechanism in inductively-coupled Cl 2 /Ar plasma Thin Solid Films, 519(20), 6708-6711. https://doi.org/10.1016/j.tsf.2011.04.059
Kim, Moonkeun ; Efremov, Alexander ; Lee, Hyun Woo ; Park, Hyung-Ho ; Hong, Munpyo ; Min, Nam Ki ; Kwon, Kwang Ho. / HfO 2 etching mechanism in inductively-coupled Cl 2 /Ar plasma In: Thin Solid Films. 2011 ; Vol. 519, No. 20. pp. 6708-6711.
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abstract = "Etching characteristics and the mechanism of HfO 2 thin films in Cl 2 /Ar inductively-coupled plasma were investigated. The etch rate of HfO 2 was measured as a function of the Cl 2 /Ar mixing ratio in the range of 0 to 100{\%} Ar at a fixed gas pressure (6 mTorr), input power (700 W), and bias power (300 W). We found that an increase in the Ar mixing ratio resulted in a monotonic decrease in the HfO 2 etch rate in the range of 10.3 to 0.7 nm/min while the etch rate of the photoresist increased from 152.1 to 375.0 nm/min for 0 to 100{\%} Ar. To examine the etching mechanism of HfO 2 films, we combined plasma diagnostics using Langmuir probes and quadrupole mass spectrometry with global (zero-dimensional) plasma modeling. We found that the HfO 2 etching process was not controlled by ion-surface interaction kinetics and formally corresponds to the reaction rate-limited etch regime.",
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Kim, M, Efremov, A, Lee, HW, Park, H-H, Hong, M, Min, NK & Kwon, KH 2011, ' HfO 2 etching mechanism in inductively-coupled Cl 2 /Ar plasma ', Thin Solid Films, vol. 519, no. 20, pp. 6708-6711. https://doi.org/10.1016/j.tsf.2011.04.059

HfO 2 etching mechanism in inductively-coupled Cl 2 /Ar plasma . / Kim, Moonkeun; Efremov, Alexander; Lee, Hyun Woo; Park, Hyung-Ho; Hong, Munpyo; Min, Nam Ki; Kwon, Kwang Ho.

In: Thin Solid Films, Vol. 519, No. 20, 01.08.2011, p. 6708-6711.

Research output: Contribution to journalArticle

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AU - Kim, Moonkeun

AU - Efremov, Alexander

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AU - Hong, Munpyo

AU - Min, Nam Ki

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