HfO2 gate stack engineering by post-gate cleaning using NF3/NH3 plasma

Min Seon Lee, Hoon Jung Oh, Joo Hee Lee, In Geun Lee, Woo Gon Shinc, Sung Yong Kang, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we present preliminary findings on the fluorine incorporation into the HfO2 gate stack using post-gate dry cleaning technique with the novel NF3/NH3 plasma as an engineering technique to improve the HfO2 gate stack. The NF3/NH3 dry cleaning process was carried out using an indirect down-stream CCP system after annealing HfO2 gate stack. The analysis of chemical composition of HfO2 gate stacks by XPS has revealed that fluorine was incorporated into the HfO2 films and Si-O bonding of interfacial layer was decreased depending on the process condition of the NF3/NH3 dry cleaning. TEM results consistently showed the interfacial SiOx layer thickness of the HfO2 gate stack was decreased with the NF3/NH3 dry cleaning. Also we have found that its electrical properties were improved with the reduced gate leakage currents and EOT.

Original languageEnglish
Title of host publicationPlasma Processing 20
EditorsS. Mathad, D. W. Hess, O. M. Leonte, M. Engelhardt
PublisherElectrochemical Society Inc.
Pages11-16
Number of pages6
Edition39
ISBN (Electronic)9781607685371, 9781607685388, 9781607685395, 9781607685418, 9781607685425, 9781607685432, 9781607685449, 9781607685456, 9781607685463, 9781607685470, 9781607685487, 9781607685494, 9781607685500, 9781607685517, 9781607685524, 9781607685531, 9781607685548
DOIs
Publication statusPublished - 2015 Jan 1
EventSymposium on Plasma Processing 20 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2014 Oct 52014 Oct 9

Publication series

NameECS Transactions
Number39
Volume64
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Plasma Processing 20 - 2014 ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period14/10/514/10/9

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, M. S., Oh, H. J., Lee, J. H., Lee, I. G., Shinc, W. G., Kang, S. Y., & Ko, D. H. (2015). HfO2 gate stack engineering by post-gate cleaning using NF3/NH3 plasma. In S. Mathad, D. W. Hess, O. M. Leonte, & M. Engelhardt (Eds.), Plasma Processing 20 (39 ed., pp. 11-16). (ECS Transactions; Vol. 64, No. 39). Electrochemical Society Inc.. https://doi.org/10.1149/06439.0011ecst